Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/3/505 |
| _version_ | 1827748566403121152 |
|---|---|
| author | Haihong Qin Zhenhua Ba Sixuan Xie Zimo Zhang Wenming Chen Qian Xun |
| author_facet | Haihong Qin Zhenhua Ba Sixuan Xie Zimo Zhang Wenming Chen Qian Xun |
| author_sort | Haihong Qin |
| collection | DOAJ |
| description | In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided. |
| first_indexed | 2024-03-11T06:10:21Z |
| format | Article |
| id | doaj.art-7e0087f9eb754f02b6c085ef0ffe709c |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T06:10:21Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7e0087f9eb754f02b6c085ef0ffe709c2023-11-17T12:41:45ZengMDPI AGMicromachines2072-666X2023-02-0114350510.3390/mi14030505Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage StressHaihong Qin0Zhenhua Ba1Sixuan Xie2Zimo Zhang3Wenming Chen4Qian Xun5Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDepartment of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDepartment of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDepartment of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDepartment of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDepartment of Electrical Engineering, Chalmers University of Technology, 41279 Gothenburg, SwedenIn conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided.https://www.mdpi.com/2072-666X/14/3/505driving circuitparameters optimizationgate-source voltageSiC MOSFET |
| spellingShingle | Haihong Qin Zhenhua Ba Sixuan Xie Zimo Zhang Wenming Chen Qian Xun Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress Micromachines driving circuit parameters optimization gate-source voltage SiC MOSFET |
| title | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
| title_full | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
| title_fullStr | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
| title_full_unstemmed | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
| title_short | Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress |
| title_sort | parameters design and optimization of sic mosfet driving circuit with consideration of comprehensive loss and voltage stress |
| topic | driving circuit parameters optimization gate-source voltage SiC MOSFET |
| url | https://www.mdpi.com/2072-666X/14/3/505 |
| work_keys_str_mv | AT haihongqin parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT zhenhuaba parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT sixuanxie parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT zimozhang parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT wenmingchen parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress AT qianxun parametersdesignandoptimizationofsicmosfetdrivingcircuitwithconsiderationofcomprehensivelossandvoltagestress |