Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...

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Bibliographic Details
Main Authors: Haihong Qin, Zhenhua Ba, Sixuan Xie, Zimo Zhang, Wenming Chen, Qian Xun
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Micromachines
Subjects:
driving circuit
parameters optimization
gate-source voltage
SiC MOSFET
Online Access:https://www.mdpi.com/2072-666X/14/3/505

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