Electrothermal Responses of Bonding Wire Arrays in GaN Power Amplifier
The device reliability problems of the bonding wire array in gallium nitride (GaN)-based high electron mobility transistor (HEMT) power amplifier become more and more serious due to high-voltage operation, impedance mismatching conditions, and so on. In this paper, both the experimental and theoreti...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10145429/ |