Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
Abstract The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2271-x |
| _version_ | 1797707997493854208 |
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| author | Tian Li Duan Ji Sheng Pan Ning Wang Kai Cheng Hong Yu Yu |
| author_facet | Tian Li Duan Ji Sheng Pan Ning Wang Kai Cheng Hong Yu Yu |
| author_sort | Tian Li Duan |
| collection | DOAJ |
| description | Abstract The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al2O3 due to the occurrence of Ga–N bond break and Ga–O bond forming during Al2O3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges. |
| first_indexed | 2024-03-12T06:15:46Z |
| format | Article |
| id | doaj.art-7e22b3768fb0485382b500235b73f599 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:15:46Z |
| publishDate | 2017-08-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7e22b3768fb0485382b500235b73f5992023-09-03T02:39:30ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-08-011211610.1186/s11671-017-2271-xInvestigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron SpectroscopyTian Li Duan0Ji Sheng Pan1Ning Wang2Kai Cheng3Hong Yu Yu4Southern University of Science and TechnologyInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)Southern University of Science and TechnologyEnkris Semiconductor, IncSouthern University of Science and TechnologyAbstract The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al2O3 due to the occurrence of Ga–N bond break and Ga–O bond forming during Al2O3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges.http://link.springer.com/article/10.1186/s11671-017-2271-xSurface polarizationInterfacial layerARXPSGaN heterostructure |
| spellingShingle | Tian Li Duan Ji Sheng Pan Ning Wang Kai Cheng Hong Yu Yu Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy Nanoscale Research Letters Surface polarization Interfacial layer ARXPS GaN heterostructure |
| title | Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
| title_full | Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
| title_fullStr | Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
| title_full_unstemmed | Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
| title_short | Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
| title_sort | investigation on surface polarization of al2o3 capped gan algan gan heterostructure by angle resolved x ray photoelectron spectroscopy |
| topic | Surface polarization Interfacial layer ARXPS GaN heterostructure |
| url | http://link.springer.com/article/10.1186/s11671-017-2271-x |
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