Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitanc...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7880655/ |
| Summary: | A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitances between these structures are evaluated. It is numerically demonstrated that the set of 1-D MOS structures together with the coupling capacitances yields excellent agreement in the charge-voltage characteristics in all operational regimes. Moreover, further simplification allows us to model the charge-voltage characteristics accurately with only two MOS structures. |
|---|---|
| ISSN: | 2168-6734 |