Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs
Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors of state-of-the-art 1.2 kV SiC MOSFETs from v...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8815773/ |
| _version_ | 1819052480115245056 |
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| author | Kang Hong Xiao-Yuan Chen Yu Chen Ming-Shun Zhang Jia-Lei Wang Shan Jiang Zhou Pang Han-Mei Yang Ning Xue Hua-Yu Gou Lei Zeng |
| author_facet | Kang Hong Xiao-Yuan Chen Yu Chen Ming-Shun Zhang Jia-Lei Wang Shan Jiang Zhou Pang Han-Mei Yang Ning Xue Hua-Yu Gou Lei Zeng |
| author_sort | Kang Hong |
| collection | DOAJ |
| description | Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors of state-of-the-art 1.2 kV SiC MOSFETs from various well-known semiconductor manufacturers. In view of engineering applications, two fitted double-exponential functions are introduced to visually depict the interactions among the on-state resistance, junction temperature and drain current instead of considering the combined effects of electron mobility and ionized dopant concentration inside cryogenic SiC MOSFETs. Optimal operating temperature and current ranges are subsequently extracted to characterize the cryogenic operation performance, and thus to explore some operating and designing guidelines of cryogenic SiC MOSFETs and SiC-based power conversions at 77 K. |
| first_indexed | 2024-12-21T12:20:30Z |
| format | Article |
| id | doaj.art-7e523478f34e431ba582cc8f44eec2f8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-21T12:20:30Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-7e523478f34e431ba582cc8f44eec2f82022-12-21T19:04:20ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01792593010.1109/JEDS.2019.29378378815773Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETsKang Hong0Xiao-Yuan Chen1https://orcid.org/0000-0002-9816-6724Yu Chen2https://orcid.org/0000-0002-0610-8106Ming-Shun Zhang3Jia-Lei Wang4Shan Jiang5Zhou Pang6Han-Mei Yang7Ning Xue8Hua-Yu Gou9Lei Zeng10https://orcid.org/0000-0003-0419-4933School of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaSchool of Engineering, Sichuan Normal University, Chengdu, ChinaPerformance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors of state-of-the-art 1.2 kV SiC MOSFETs from various well-known semiconductor manufacturers. In view of engineering applications, two fitted double-exponential functions are introduced to visually depict the interactions among the on-state resistance, junction temperature and drain current instead of considering the combined effects of electron mobility and ionized dopant concentration inside cryogenic SiC MOSFETs. Optimal operating temperature and current ranges are subsequently extracted to characterize the cryogenic operation performance, and thus to explore some operating and designing guidelines of cryogenic SiC MOSFETs and SiC-based power conversions at 77 K.https://ieeexplore.ieee.org/document/8815773/Silicon carbideSiC MOSFETon-state resistanceliquid nitrogencryogenic power conversion |
| spellingShingle | Kang Hong Xiao-Yuan Chen Yu Chen Ming-Shun Zhang Jia-Lei Wang Shan Jiang Zhou Pang Han-Mei Yang Ning Xue Hua-Yu Gou Lei Zeng Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs IEEE Journal of the Electron Devices Society Silicon carbide SiC MOSFET on-state resistance liquid nitrogen cryogenic power conversion |
| title | Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs |
| title_full | Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs |
| title_fullStr | Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs |
| title_full_unstemmed | Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs |
| title_short | Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs |
| title_sort | experimental investigations into temperature and current dependent on state resistance behaviors of 1 2 kv sic mosfets |
| topic | Silicon carbide SiC MOSFET on-state resistance liquid nitrogen cryogenic power conversion |
| url | https://ieeexplore.ieee.org/document/8815773/ |
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