Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon
The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by th...
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MDPI AG
2021-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/7/1734 |
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| author | Tatyana Kuznetsova Vasilina Lapitskaya Jaroslav Solovjov Sergei Chizhik Vladimir Pilipenko Sergei Aizikovich |
| author_facet | Tatyana Kuznetsova Vasilina Lapitskaya Jaroslav Solovjov Sergei Chizhik Vladimir Pilipenko Sergei Aizikovich |
| author_sort | Tatyana Kuznetsova |
| collection | DOAJ |
| description | The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate’s back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200–550 °C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 °C one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 °C there originates the diffusion synthesis of the chromium disilicide CrSi<sub>2</sub> with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value. |
| first_indexed | 2024-03-10T09:53:50Z |
| format | Article |
| id | doaj.art-7e612388d3444a9d8c920ce5e4f11b45 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T09:53:50Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-7e612388d3444a9d8c920ce5e4f11b452023-11-22T02:31:35ZengMDPI AGNanomaterials2079-49912021-06-01117173410.3390/nano11071734Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on SiliconTatyana Kuznetsova0Vasilina Lapitskaya1Jaroslav Solovjov2Sergei Chizhik3Vladimir Pilipenko4Sergei Aizikovich5Nanoprocesses and Technology Laboratory, A.V. Luikov Institute of Heat and Mass Transfer of National Academy of Science of Belarus, 15, P.Brovki str, 220072 Minsk, BelarusNanoprocesses and Technology Laboratory, A.V. Luikov Institute of Heat and Mass Transfer of National Academy of Science of Belarus, 15, P.Brovki str, 220072 Minsk, BelarusJSC “INTEGRAL”—“INTEGRAL” Holding Managing Company, 121 A Kazintsa, 220108 Minsk, BelarusNanoprocesses and Technology Laboratory, A.V. Luikov Institute of Heat and Mass Transfer of National Academy of Science of Belarus, 15, P.Brovki str, 220072 Minsk, BelarusJSC “INTEGRAL”—“INTEGRAL” Holding Managing Company, 121 A Kazintsa, 220108 Minsk, BelarusResearch and Education Center “Materials”, Don State Technical University, 344000 Rostov-on-Don, RussiaThe changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate’s back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200–550 °C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 °C one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 °C there originates the diffusion synthesis of the chromium disilicide CrSi<sub>2</sub> with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value.https://www.mdpi.com/2079-4991/11/7/1734thin filmschromiumchromium disilicidesilicon substraterapid thermal treatmentroughness |
| spellingShingle | Tatyana Kuznetsova Vasilina Lapitskaya Jaroslav Solovjov Sergei Chizhik Vladimir Pilipenko Sergei Aizikovich Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon Nanomaterials thin films chromium chromium disilicide silicon substrate rapid thermal treatment roughness |
| title | Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon |
| title_full | Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon |
| title_fullStr | Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon |
| title_full_unstemmed | Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon |
| title_short | Properties of CrSi<sub>2</sub> Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon |
| title_sort | properties of crsi sub 2 sub layers obtained by rapid heat treatment of cr film on silicon |
| topic | thin films chromium chromium disilicide silicon substrate rapid thermal treatment roughness |
| url | https://www.mdpi.com/2079-4991/11/7/1734 |
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