Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH
In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, br...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9110567/ |
| _version_ | 1818618672664543232 |
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| author | Zhihang Tong Peng Ding Yongbo Su Jiebin Niu Dahai Wang Zhi Jin |
| author_facet | Zhihang Tong Peng Ding Yongbo Su Jiebin Niu Dahai Wang Zhi Jin |
| author_sort | Zhihang Tong |
| collection | DOAJ |
| description | In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, bringing troubles like kink effect, high gate leakage current and deteriorated noise performance. Through the method of surface treatments, the InAlAs/InGaAs InP-based HEMTs exhibit excellent DC performances, demonstrating a low gate leakage currents of 10 -8 A/um, a peak transconductance of 1100mS/mm, an improved subthreshold swing of 92.5mV/decade at V<sub>ds</sub> = 1.0V, and a positive threshold voltage shift of V<sub>th</sub> = 300 mV. The ft of 260GHz and fmax of 440GHz were hardly influenced by the surface treatments while the noise performances were improved obviously. Two orders of magnitude smaller input noise spectral density shows the method of surface treatment can effectively reduce the surface defects and significantly improve the surface of gate recess of InAlAs/InGaAs InP-based HEMTs. |
| first_indexed | 2024-12-16T17:25:19Z |
| format | Article |
| id | doaj.art-7eb243b0a0df4893824439b070c241b3 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T17:25:19Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-7eb243b0a0df4893824439b070c241b32022-12-21T22:23:04ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01860060710.1109/JEDS.2020.30004939110567Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAHZhihang Tong0Peng Ding1Yongbo Su2Jiebin Niu3Dahai Wang4Zhi Jin5High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics Chinese Academy of Science, Beijing, ChinaIn this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, bringing troubles like kink effect, high gate leakage current and deteriorated noise performance. Through the method of surface treatments, the InAlAs/InGaAs InP-based HEMTs exhibit excellent DC performances, demonstrating a low gate leakage currents of 10 -8 A/um, a peak transconductance of 1100mS/mm, an improved subthreshold swing of 92.5mV/decade at V<sub>ds</sub> = 1.0V, and a positive threshold voltage shift of V<sub>th</sub> = 300 mV. The ft of 260GHz and fmax of 440GHz were hardly influenced by the surface treatments while the noise performances were improved obviously. Two orders of magnitude smaller input noise spectral density shows the method of surface treatment can effectively reduce the surface defects and significantly improve the surface of gate recess of InAlAs/InGaAs InP-based HEMTs.https://ieeexplore.ieee.org/document/9110567/InP based HEMTsurface treatmentUV/OzoneTMAH |
| spellingShingle | Zhihang Tong Peng Ding Yongbo Su Jiebin Niu Dahai Wang Zhi Jin Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH IEEE Journal of the Electron Devices Society InP based HEMT surface treatment UV/Ozone TMAH |
| title | Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH |
| title_full | Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH |
| title_fullStr | Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH |
| title_full_unstemmed | Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH |
| title_short | Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH |
| title_sort | surface improvement of inalas ingaas inp based hemt through treatments of uv ozone and tmah |
| topic | InP based HEMT surface treatment UV/Ozone TMAH |
| url | https://ieeexplore.ieee.org/document/9110567/ |
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