Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, br...

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Bibliographic Details
Main Authors: Zhihang Tong, Peng Ding, Yongbo Su, Jiebin Niu, Dahai Wang, Zhi Jin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InP based HEMT
surface treatment
UV/Ozone
TMAH
Online Access:https://ieeexplore.ieee.org/document/9110567/

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