(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector

(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector

We report a simple fabrication method for metal-semiconductor-metal (MSM) photodetectors using solution-synthesized MoS2 films as the semiconductor channel and pure indium for the metal contacts. Resonance Raman spectroscopy has been used to confirm the growth of ultra-thin MoS2 films. Due to the lo...

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Bibliographic Details
Main Authors: Omar A. Abbas, Chung-Che Huang, Daniel W. Hewak, Sakellaris Mailis, Pier Sazio
Format: Article
Language:English
Published: Elsevier 2022-01-01
Series:Optical Materials: X
Subjects:
MSM photodetector
MoS2
Schottky contacts
Online Access:http://www.sciencedirect.com/science/article/pii/S2590147822000018

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