Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
Nitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from...
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MDPI AG
2019-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/9/4/204 |
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| author | Xingyou Chen Zhenzhong Zhang Yunyan Zhang Bin Yao Binghui Li Qian Gong |
| author_facet | Xingyou Chen Zhenzhong Zhang Yunyan Zhang Bin Yao Binghui Li Qian Gong |
| author_sort | Xingyou Chen |
| collection | DOAJ |
| description | Nitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy. |
| first_indexed | 2024-04-13T07:45:51Z |
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| language | English |
| last_indexed | 2024-04-13T07:45:51Z |
| publishDate | 2019-04-01 |
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| series | Crystals |
| spelling | doaj.art-7ee07ca2faf845a6bc6a4246fe8f52ae2022-12-22T02:55:42ZengMDPI AGCrystals2073-43522019-04-019420410.3390/cryst9040204cryst9040204Passivation Mechanism of Nitrogen in ZnO under Different Oxygen AmbienceXingyou Chen0Zhenzhong Zhang1Yunyan Zhang2Bin Yao3Binghui Li4Qian Gong5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaDepartment of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UKState Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaNitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.https://www.mdpi.com/2073-4352/9/4/204molecular beam epitaxyZnOdopantdefects |
| spellingShingle | Xingyou Chen Zhenzhong Zhang Yunyan Zhang Bin Yao Binghui Li Qian Gong Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience Crystals molecular beam epitaxy ZnO dopant defects |
| title | Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience |
| title_full | Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience |
| title_fullStr | Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience |
| title_full_unstemmed | Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience |
| title_short | Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience |
| title_sort | passivation mechanism of nitrogen in zno under different oxygen ambience |
| topic | molecular beam epitaxy ZnO dopant defects |
| url | https://www.mdpi.com/2073-4352/9/4/204 |
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