Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Nitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from...

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Bibliographic Details
Main Authors: Xingyou Chen, Zhenzhong Zhang, Yunyan Zhang, Bin Yao, Binghui Li, Qian Gong
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Crystals
Subjects:
molecular beam epitaxy
ZnO
dopant
defects
Online Access:https://www.mdpi.com/2073-4352/9/4/204

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