Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure
Abstract Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx bi-layer structure by using a low-temperature annealing process. The addition o...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2942-x |
| _version_ | 1797764389442420736 |
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| author | Jie Yu Xiaoxin Xu Tiancheng Gong Qing Luo Danian Dong Peng Yuan Lu Tai Jiahao Yin Xi Zhu Xiulong Wu Hangbing Lv Ming Liu |
| author_facet | Jie Yu Xiaoxin Xu Tiancheng Gong Qing Luo Danian Dong Peng Yuan Lu Tai Jiahao Yin Xi Zhu Xiulong Wu Hangbing Lv Ming Liu |
| author_sort | Jie Yu |
| collection | DOAJ |
| description | Abstract Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx bi-layer structure by using a low-temperature annealing process. The addition of a TaOx layer acted as an external resistance suppressing the overflow current during set programming, thus achieving the self-compliance switching. As a result, the distributions of high-resistance states and low-resistance states are improved due to the suppression of the overset phenomenon. In addition, the LRS retention of the CBRAM is obviously enhanced due to the recovery of defects in the switching film. This work provides a simple and economical method to improve the reliability of CBRAM. |
| first_indexed | 2024-03-12T19:55:12Z |
| format | Article |
| id | doaj.art-7ee6b4b8ee664d50b8088691c5f2d980 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:55:12Z |
| publishDate | 2019-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7ee6b4b8ee664d50b8088691c5f2d9802023-08-02T02:50:04ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-03-011411610.1186/s11671-019-2942-xSuppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer StructureJie Yu0Xiaoxin Xu1Tiancheng Gong2Qing Luo3Danian Dong4Peng Yuan5Lu Tai6Jiahao Yin7Xi Zhu8Xiulong Wu9Hangbing Lv10Ming Liu11Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesSchool of Electronics and Information Engineering, Anhui UniversityKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesSchool of Electronics and Information Engineering, Anhui UniversityKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of SciencesAbstract Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx bi-layer structure by using a low-temperature annealing process. The addition of a TaOx layer acted as an external resistance suppressing the overflow current during set programming, thus achieving the self-compliance switching. As a result, the distributions of high-resistance states and low-resistance states are improved due to the suppression of the overset phenomenon. In addition, the LRS retention of the CBRAM is obviously enhanced due to the recovery of defects in the switching film. This work provides a simple and economical method to improve the reliability of CBRAM.http://link.springer.com/article/10.1186/s11671-019-2942-xConductive bridge resistive switching memory (CBRAM)CMOS-compatible processBi-layer structureReliability |
| spellingShingle | Jie Yu Xiaoxin Xu Tiancheng Gong Qing Luo Danian Dong Peng Yuan Lu Tai Jiahao Yin Xi Zhu Xiulong Wu Hangbing Lv Ming Liu Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure Nanoscale Research Letters Conductive bridge resistive switching memory (CBRAM) CMOS-compatible process Bi-layer structure Reliability |
| title | Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure |
| title_full | Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure |
| title_fullStr | Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure |
| title_full_unstemmed | Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure |
| title_short | Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure |
| title_sort | suppression of filament overgrowth in conductive bridge random access memory by ta2o5 taox bi layer structure |
| topic | Conductive bridge resistive switching memory (CBRAM) CMOS-compatible process Bi-layer structure Reliability |
| url | http://link.springer.com/article/10.1186/s11671-019-2942-x |
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