Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the infl...
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| Format: | Article |
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MDPI AG
2022-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/12/2099 |
| _version_ | 1797456231764328448 |
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| author | Zenghui Fan Ao Shen Yong Xia Chengyuan Dong |
| author_facet | Zenghui Fan Ao Shen Yong Xia Chengyuan Dong |
| author_sort | Zenghui Fan |
| collection | DOAJ |
| description | Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (P<sub>O</sub>) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in P<sub>O</sub> values for the DSCL depositions, the sensing parameters, including photogenerated current (I<sub>photo</sub>), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with P<sub>O</sub> variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (V<sub>O</sub>) density) with P<sub>O</sub> values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices. |
| first_indexed | 2024-03-09T16:05:15Z |
| format | Article |
| id | doaj.art-7f3f34bf1c90495ea665ad7318c2651f |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T16:05:15Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7f3f34bf1c90495ea665ad7318c2651f2023-11-24T16:44:08ZengMDPI AGMicromachines2072-666X2022-11-011312209910.3390/mi13122099Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light DetectionZenghui Fan0Ao Shen1Yong Xia2Chengyuan Dong3Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaDepartment of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaDepartment of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaDepartment of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaAmorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (P<sub>O</sub>) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in P<sub>O</sub> values for the DSCL depositions, the sensing parameters, including photogenerated current (I<sub>photo</sub>), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with P<sub>O</sub> variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (V<sub>O</sub>) density) with P<sub>O</sub> values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices.https://www.mdpi.com/2072-666X/13/12/2099thin film transistor (TFT)amorphous InGaZnO (a-IGZO)double-stacked channel layers (DSCL)ultraviolet (UV) lightoxygen vacancy (V<sub>O</sub>)Technology Computer Aided Design (TCAD) |
| spellingShingle | Zenghui Fan Ao Shen Yong Xia Chengyuan Dong Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection Micromachines thin film transistor (TFT) amorphous InGaZnO (a-IGZO) double-stacked channel layers (DSCL) ultraviolet (UV) light oxygen vacancy (V<sub>O</sub>) Technology Computer Aided Design (TCAD) |
| title | Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection |
| title_full | Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection |
| title_fullStr | Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection |
| title_full_unstemmed | Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection |
| title_short | Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection |
| title_sort | amorphous ingazno thin film transistors with double stacked channel layers for ultraviolet light detection |
| topic | thin film transistor (TFT) amorphous InGaZnO (a-IGZO) double-stacked channel layers (DSCL) ultraviolet (UV) light oxygen vacancy (V<sub>O</sub>) Technology Computer Aided Design (TCAD) |
| url | https://www.mdpi.com/2072-666X/13/12/2099 |
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