Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2017-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms13878 |
| _version_ | 1818855856396042240 |
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| author | K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan |
| author_facet | K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan |
| author_sort | K. J. A. Ooi |
| collection | DOAJ |
| description | Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses. |
| first_indexed | 2024-12-19T08:15:15Z |
| format | Article |
| id | doaj.art-7f6ed2486dad49f78b6343084767f909 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-19T08:15:15Z |
| publishDate | 2017-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-7f6ed2486dad49f78b6343084767f9092022-12-21T20:29:30ZengNature PortfolioNature Communications2041-17232017-01-018111010.1038/ncomms13878Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edgeK. J. A. Ooi0D. K. T. Ng1T. Wang2A. K. L. Chee3S. K. Ng4Q. Wang5L. K. Ang6A. M. Agarwal7L. C. Kimerling8D. T. H. Tan9Photonics Devices and Systems Group, SUTD—MIT International Design Center, Singapore University of Technology and DesignData Storage Institute, Agency for Science, Technology and Research (A*STAR)Photonics Devices and Systems Group, SUTD—MIT International Design Center, Singapore University of Technology and DesignDepartment of Materials Science and Engineering, Massachusetts Institute of TechnologyData Storage Institute, Agency for Science, Technology and Research (A*STAR)Data Storage Institute, Agency for Science, Technology and Research (A*STAR)Photonics Devices and Systems Group, SUTD—MIT International Design Center, Singapore University of Technology and DesignDepartment of Materials Science and Engineering, Massachusetts Institute of TechnologyDepartment of Materials Science and Engineering, Massachusetts Institute of TechnologyPhotonics Devices and Systems Group, SUTD—MIT International Design Center, Singapore University of Technology and DesignTypical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.https://doi.org/10.1038/ncomms13878 |
| spellingShingle | K. J. A. Ooi D. K. T. Ng T. Wang A. K. L. Chee S. K. Ng Q. Wang L. K. Ang A. M. Agarwal L. C. Kimerling D. T. H. Tan Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge Nature Communications |
| title | Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge |
| title_full | Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge |
| title_fullStr | Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge |
| title_full_unstemmed | Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge |
| title_short | Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge |
| title_sort | pushing the limits of cmos optical parametric amplifiers with usrn si7n3 above the two photon absorption edge |
| url | https://doi.org/10.1038/ncomms13878 |
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