Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology
This paper presents the design of a low-noise amplifier (LNA) with a bypass mode for the n77/79 bands in 5G New Radio (NR). The proposed LNA integrates internal matching networks for both input and output, combining two LNAs for the n77 and n79 bands into a single chip. Additionally, a bypass mode i...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/24/2/568 |
| _version_ | 1797339350845882368 |
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| author | Min-Su Kim Sang-Sun Yoo |
| author_facet | Min-Su Kim Sang-Sun Yoo |
| author_sort | Min-Su Kim |
| collection | DOAJ |
| description | This paper presents the design of a low-noise amplifier (LNA) with a bypass mode for the n77/79 bands in 5G New Radio (NR). The proposed LNA integrates internal matching networks for both input and output, combining two LNAs for the n77 and n79 bands into a single chip. Additionally, a bypass mode is integrated to accommodate the flexible operation of the receiving system in response to varying input signal levels. For each frequency band, we designed a low-noise amplifier for the n77 band to expand the bandwidth to 900 MHz (3.3 GHz to 4.2 GHz) using resistive–capacitance (RC) feedback and series inductive-peaking techniques. For the n79 band, only the RC feedback technique was employed to optimize the performance of the LNA for its 600 MHz bandwidth (4.4 GHz to 5.0 GHz). Because wideband techniques can lead to a trade-off between gain and noise, causing potential degradation in noise performance, appropriate bandwidth design becomes crucial. The designed n77 band low-noise amplifier achieved a simulated gain of 22.6 dB and a noise figure of 1.7 dB. Similarly, the n79 band exhibited a gain of 21.1 dB and a noise figure of 1.5 dB with a current consumption of 10 mA at a 1.2 supply voltage. The bypass mode was designed with S<sub>21</sub> of −3.7 dB and −5.0 dB for n77 and n79, respectively. |
| first_indexed | 2024-03-08T09:46:43Z |
| format | Article |
| id | doaj.art-7f8c6de42eb848cdb7fad617cfaed601 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-08T09:46:43Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-7f8c6de42eb848cdb7fad617cfaed6012024-01-29T14:16:27ZengMDPI AGSensors1424-82202024-01-0124256810.3390/s24020568Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor TechnologyMin-Su Kim0Sang-Sun Yoo1Department of Information and Electronic Engineering, Mokpo National University, Muan 58554, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of KoreaThis paper presents the design of a low-noise amplifier (LNA) with a bypass mode for the n77/79 bands in 5G New Radio (NR). The proposed LNA integrates internal matching networks for both input and output, combining two LNAs for the n77 and n79 bands into a single chip. Additionally, a bypass mode is integrated to accommodate the flexible operation of the receiving system in response to varying input signal levels. For each frequency band, we designed a low-noise amplifier for the n77 band to expand the bandwidth to 900 MHz (3.3 GHz to 4.2 GHz) using resistive–capacitance (RC) feedback and series inductive-peaking techniques. For the n79 band, only the RC feedback technique was employed to optimize the performance of the LNA for its 600 MHz bandwidth (4.4 GHz to 5.0 GHz). Because wideband techniques can lead to a trade-off between gain and noise, causing potential degradation in noise performance, appropriate bandwidth design becomes crucial. The designed n77 band low-noise amplifier achieved a simulated gain of 22.6 dB and a noise figure of 1.7 dB. Similarly, the n79 band exhibited a gain of 21.1 dB and a noise figure of 1.5 dB with a current consumption of 10 mA at a 1.2 supply voltage. The bypass mode was designed with S<sub>21</sub> of −3.7 dB and −5.0 dB for n77 and n79, respectively.https://www.mdpi.com/1424-8220/24/2/568fifth generation (5G)new radio (NR)low-noise amplifier (LNA)RC feedbackseries inductive-peakingbypass mode |
| spellingShingle | Min-Su Kim Sang-Sun Yoo Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology Sensors fifth generation (5G) new radio (NR) low-noise amplifier (LNA) RC feedback series inductive-peaking bypass mode |
| title | Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology |
| title_full | Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology |
| title_fullStr | Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology |
| title_full_unstemmed | Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology |
| title_short | Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology |
| title_sort | low noise amplifier with bypass for 5g new radio frequency n77 band and n79 band in radio frequency silicon on insulator complementary metal oxide semiconductor technology |
| topic | fifth generation (5G) new radio (NR) low-noise amplifier (LNA) RC feedback series inductive-peaking bypass mode |
| url | https://www.mdpi.com/1424-8220/24/2/568 |
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