Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology
This paper presents the design of a low-noise amplifier (LNA) with a bypass mode for the n77/79 bands in 5G New Radio (NR). The proposed LNA integrates internal matching networks for both input and output, combining two LNAs for the n77 and n79 bands into a single chip. Additionally, a bypass mode i...
| Auteurs principaux: | , |
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| Format: | Article |
| Langue: | English |
| Publié: |
MDPI AG
2024-01-01
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| Collection: | Sensors |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/1424-8220/24/2/568 |