Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication
With the development of new broadband semiconductor materials and the expansion of solar‐blind deep‐ultraviolet (SBDU) optoelectronics, the demand for high‐performance fully transparent array integration has also increased. Herein, metal–semiconductor–metal (MSM)‐type fully transparent SBDU photodet...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-11-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202200192 |
| _version_ | 1797991424049807360 |
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| author | Shuren Zhou Hong Zhang Xuan Peng Haowen Liu Honglin Li Yuanqiang Xiong Wanjun Li Ping-An Yang Lijuan Ye Chunyang Kong |
| author_facet | Shuren Zhou Hong Zhang Xuan Peng Haowen Liu Honglin Li Yuanqiang Xiong Wanjun Li Ping-An Yang Lijuan Ye Chunyang Kong |
| author_sort | Shuren Zhou |
| collection | DOAJ |
| description | With the development of new broadband semiconductor materials and the expansion of solar‐blind deep‐ultraviolet (SBDU) optoelectronics, the demand for high‐performance fully transparent array integration has also increased. Herein, metal–semiconductor–metal (MSM)‐type fully transparent SBDU photodetector arrays (PDAs), based on commercially available ε‐Ga2O3 films, are constructed using indium tin oxide (ITO), indium gallium zinc oxide (IGZO), and aluminum zinc oxide (AZO) transparent conductive oxides as electrodes. The experimental results show that the overall performance of the fully transparent SBDU PDAs used in this study places them at the forefront of ε‐Ga2O3‐based photodetectors (PDs). All three PDs not only exhibit ultra‐high responsivity (286.2, 284.1, and 262.1 A W−1), remarkable detectivity (4.73 × 1014, 5.06 × 1014, and 2.16 × 1015 Jones), and excellent stability, but also fast photoresponse time (5.6/7.2, 6.9/9.5, and 70/200 ms). It is found that the resistivity and carrier concentration of transparent conductive oxides significantly influence device performance. Consequently, it is demonstrated, for the first time, that fully transparent ε‐Ga2O3‐based SBDU PDAs can be used as ultraviolet imagers and signal receivers integrated into a homemade solar‐blind ultraviolet communication (SBUC) system to transmit text data. These results indicate great potential for future applications of fully transparent ε‐Ga2O3 thin‐film solar‐blind photodetectors in next‐generation artificial intelligence eyes, smart windows, light field cameras, and solar‐blind imaging, among others. |
| first_indexed | 2024-04-11T08:50:54Z |
| format | Article |
| id | doaj.art-7fb931458183430fb0f0ead98dee4406 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-04-11T08:50:54Z |
| publishDate | 2022-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-7fb931458183430fb0f0ead98dee44062022-12-22T04:33:34ZengWiley-VCHAdvanced Photonics Research2699-92932022-11-01311n/an/a10.1002/adpr.202200192Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet CommunicationShuren Zhou0Hong Zhang1Xuan Peng2Haowen Liu3Honglin Li4Yuanqiang Xiong5Wanjun Li6Ping-An Yang7Lijuan Ye8Chunyang Kong9Chongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaSchool of Automation Chongqing University of Posts and Telecommunications Chongqing 400065 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaChongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic Engineering Chongqing Normal University Chongqing 401331 P. R. ChinaWith the development of new broadband semiconductor materials and the expansion of solar‐blind deep‐ultraviolet (SBDU) optoelectronics, the demand for high‐performance fully transparent array integration has also increased. Herein, metal–semiconductor–metal (MSM)‐type fully transparent SBDU photodetector arrays (PDAs), based on commercially available ε‐Ga2O3 films, are constructed using indium tin oxide (ITO), indium gallium zinc oxide (IGZO), and aluminum zinc oxide (AZO) transparent conductive oxides as electrodes. The experimental results show that the overall performance of the fully transparent SBDU PDAs used in this study places them at the forefront of ε‐Ga2O3‐based photodetectors (PDs). All three PDs not only exhibit ultra‐high responsivity (286.2, 284.1, and 262.1 A W−1), remarkable detectivity (4.73 × 1014, 5.06 × 1014, and 2.16 × 1015 Jones), and excellent stability, but also fast photoresponse time (5.6/7.2, 6.9/9.5, and 70/200 ms). It is found that the resistivity and carrier concentration of transparent conductive oxides significantly influence device performance. Consequently, it is demonstrated, for the first time, that fully transparent ε‐Ga2O3‐based SBDU PDAs can be used as ultraviolet imagers and signal receivers integrated into a homemade solar‐blind ultraviolet communication (SBUC) system to transmit text data. These results indicate great potential for future applications of fully transparent ε‐Ga2O3 thin‐film solar‐blind photodetectors in next‐generation artificial intelligence eyes, smart windows, light field cameras, and solar‐blind imaging, among others.https://doi.org/10.1002/adpr.202200192ε-deep-ultraviolet communicationfully transparent photodetector arraysGa2O3high-performancesolar-blind imaging |
| spellingShingle | Shuren Zhou Hong Zhang Xuan Peng Haowen Liu Honglin Li Yuanqiang Xiong Wanjun Li Ping-An Yang Lijuan Ye Chunyang Kong Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication Advanced Photonics Research ε-deep-ultraviolet communication fully transparent photodetector arrays Ga2O3 high-performance solar-blind imaging |
| title | Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication |
| title_full | Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication |
| title_fullStr | Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication |
| title_full_unstemmed | Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication |
| title_short | Fully Transparent and High‐Performance ε‐Ga2O3 Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication |
| title_sort | fully transparent and high performance ε ga2o3 photodetector arrays for solar blind imaging and deep ultraviolet communication |
| topic | ε-deep-ultraviolet communication fully transparent photodetector arrays Ga2O3 high-performance solar-blind imaging |
| url | https://doi.org/10.1002/adpr.202200192 |
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