Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature
In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power ampl...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-05-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/11/1669 |
| _version_ | 1797493712178118656 |
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| author | Lining Jia Qian Lin Haifeng Wu Xiaozheng Wang |
| author_facet | Lining Jia Qian Lin Haifeng Wu Xiaozheng Wang |
| author_sort | Lining Jia |
| collection | DOAJ |
| description | In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. The performance for this MMIC PA at different temperatures has been presented effectively. The results show that the direct current (DC) characteristics, small-signal gain (S21), and radio frequency (RF) output characteristics for this MMIC PA decrease and the output third-order intersection point (OIP3) increases with the rising temperature. The main factor influencing the performance is analyzed in detail. For further applications of this MMIC PA, several measures can be utilized to remedy the performance degradation. This paper can provide significant engineer guidance for the reliability design of RF microwave circuits. |
| first_indexed | 2024-03-10T01:23:59Z |
| format | Article |
| id | doaj.art-7fde2ece1f1a4a1e98727e5ee7a54ccf |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T01:23:59Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-7fde2ece1f1a4a1e98727e5ee7a54ccf2023-11-23T13:53:56ZengMDPI AGElectronics2079-92922022-05-011111166910.3390/electronics11111669Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the TemperatureLining Jia0Qian Lin1Haifeng Wu2Xiaozheng Wang3College of Physics and Electronic Information Engineer, Qinghai Minzu University, Xining 810007, ChinaCollege of Physics and Electronic Information Engineer, Qinghai Minzu University, Xining 810007, ChinaChengdu Ganide Technology Company, Ltd., Chengdu 610073, ChinaCollege of Physics and Electronic Information Engineer, Qinghai Minzu University, Xining 810007, ChinaIn order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. The performance for this MMIC PA at different temperatures has been presented effectively. The results show that the direct current (DC) characteristics, small-signal gain (S21), and radio frequency (RF) output characteristics for this MMIC PA decrease and the output third-order intersection point (OIP3) increases with the rising temperature. The main factor influencing the performance is analyzed in detail. For further applications of this MMIC PA, several measures can be utilized to remedy the performance degradation. This paper can provide significant engineer guidance for the reliability design of RF microwave circuits.https://www.mdpi.com/2079-9292/11/11/1669GaAs pHEMTMMIC PAtemperature reliabilityperformance degradation |
| spellingShingle | Lining Jia Qian Lin Haifeng Wu Xiaozheng Wang Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature Electronics GaAs pHEMT MMIC PA temperature reliability performance degradation |
| title | Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature |
| title_full | Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature |
| title_fullStr | Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature |
| title_full_unstemmed | Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature |
| title_short | Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature |
| title_sort | performance degradation investigation for a gaas phemt high gain mmic pa taking into account the temperature |
| topic | GaAs pHEMT MMIC PA temperature reliability performance degradation |
| url | https://www.mdpi.com/2079-9292/11/11/1669 |
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