Synthesis and Characterization of Glomerate GaN Nanowires
<p>Abstract</p> <p>Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga<sub>2</sub>O<sub>3</sub>/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resol...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2009-01-01
|
| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9285-y |
| _version_ | 1797762128752410624 |
|---|---|
| author | Xue Chengshan Qin Lixia Duan Yifeng Shi Liwei |
| author_facet | Xue Chengshan Qin Lixia Duan Yifeng Shi Liwei |
| author_sort | Xue Chengshan |
| collection | DOAJ |
| description | <p>Abstract</p> <p>Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga<sub>2</sub>O<sub>3</sub>/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.</p> |
| first_indexed | 2024-03-12T19:22:54Z |
| format | Article |
| id | doaj.art-801d08eb563c480a97555c55dea542ad |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:22:54Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-801d08eb563c480a97555c55dea542ad2023-08-02T05:01:37ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0146584587Synthesis and Characterization of Glomerate GaN NanowiresXue ChengshanQin LixiaDuan YifengShi Liwei<p>Abstract</p> <p>Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga<sub>2</sub>O<sub>3</sub>/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.</p>http://dx.doi.org/10.1007/s11671-009-9285-yNanowiresMagnetron sputteringAlloy mechanism |
| spellingShingle | Xue Chengshan Qin Lixia Duan Yifeng Shi Liwei Synthesis and Characterization of Glomerate GaN Nanowires Nanoscale Research Letters Nanowires Magnetron sputtering Alloy mechanism |
| title | Synthesis and Characterization of Glomerate GaN Nanowires |
| title_full | Synthesis and Characterization of Glomerate GaN Nanowires |
| title_fullStr | Synthesis and Characterization of Glomerate GaN Nanowires |
| title_full_unstemmed | Synthesis and Characterization of Glomerate GaN Nanowires |
| title_short | Synthesis and Characterization of Glomerate GaN Nanowires |
| title_sort | synthesis and characterization of glomerate gan nanowires |
| topic | Nanowires Magnetron sputtering Alloy mechanism |
| url | http://dx.doi.org/10.1007/s11671-009-9285-y |
| work_keys_str_mv | AT xuechengshan synthesisandcharacterizationofglomerategannanowires AT qinlixia synthesisandcharacterizationofglomerategannanowires AT duanyifeng synthesisandcharacterizationofglomerategannanowires AT shiliwei synthesisandcharacterizationofglomerategannanowires |