Synthesis and Characterization of Glomerate GaN Nanowires
<p>Abstract</p> <p>Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga<sub>2</sub>O<sub>3</sub>/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resol...
| Main Authors: | , , , |
|---|---|
| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
SpringerOpen
2009-01-01
|
| סדרה: | Nanoscale Research Letters |
| נושאים: | |
| גישה מקוונת: | http://dx.doi.org/10.1007/s11671-009-9285-y |