Synthesis and Characterization of Glomerate GaN Nanowires
<p>Abstract</p> <p>Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga<sub>2</sub>O<sub>3</sub>/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resol...
Main Authors: | Xue Chengshan, Qin Lixia, Duan Yifeng, Shi Liwei |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2009-01-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://dx.doi.org/10.1007/s11671-009-9285-y |
Similar Items
-
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
by: Aditya Prabaswara, et al.
Published: (2020-04-01) -
Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
by: Jinxing Wu, et al.
Published: (2020-11-01) -
Synthesis of Single Crystal GaN Nanowires
by: Lining Fang, et al.
Published: (2016-05-01) -
Ohmic Contact to n-GaN Using RT-Sputtered GaN:O
by: Monika Maslyk, et al.
Published: (2023-08-01) -
Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
by: Muhammad Junaid, et al.
Published: (2018-04-01)