Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits
This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for th...
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2021-12-01
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| Series: | International Journal of Electronics and Telecommunications |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/121895/PDF/84_3274-Billel_skl.pdf |
| _version_ | 1811314615686004736 |
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| author | Billel Smaani Yacin Meraihi Fares Nafa Mohamed Salah Benlatreche Hamza Akroum Saida Latreche |
| author_facet | Billel Smaani Yacin Meraihi Fares Nafa Mohamed Salah Benlatreche Hamza Akroum Saida Latreche |
| author_sort | Billel Smaani |
| collection | DOAJ |
| description | This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software. |
| first_indexed | 2024-04-13T11:15:40Z |
| format | Article |
| id | doaj.art-801d92be4f4a4a41bea17e5acb0cfa05 |
| institution | Directory Open Access Journal |
| issn | 2081-8491 2300-1933 |
| language | English |
| last_indexed | 2024-04-13T11:15:40Z |
| publishDate | 2021-12-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | International Journal of Electronics and Telecommunications |
| spelling | doaj.art-801d92be4f4a4a41bea17e5acb0cfa052022-12-22T02:49:00ZengPolish Academy of SciencesInternational Journal of Electronics and Telecommunications2081-84912300-19332021-12-01vol. 67No 4609614https://doi.org/10.24425/ijet.2021.137853Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog CircuitsBillel Smaani0Yacin Meraihi1Fares Nafa2Mohamed Salah Benlatreche3Hamza Akroum4Saida Latreche5Ingénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes University, AlgeriaLaboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes, AlgeriaLaboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes, AlgeriaCentre Universitaire Abdel Hafid Boussouf Mila, AlgeriaLaboratoire d’Automatique Appliquée, Université M’Hamed Bougara de Boumerdes, AlgeriaLaboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, AlgeriaThis paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.https://journals.pan.pl/Content/121895/PDF/84_3274-Billel_skl.pdfdouble-gate mosfetcompact modelultra lowpower analog circuits |
| spellingShingle | Billel Smaani Yacin Meraihi Fares Nafa Mohamed Salah Benlatreche Hamza Akroum Saida Latreche Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits International Journal of Electronics and Telecommunications double-gate mosfet compact model ultra lowpower analog circuits |
| title | Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits |
| title_full | Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits |
| title_fullStr | Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits |
| title_full_unstemmed | Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits |
| title_short | Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits |
| title_sort | double gate mosfet model implemented in verilog ams language for the transient simulation and the configuration of ultra low power analog circuits |
| topic | double-gate mosfet compact model ultra lowpower analog circuits |
| url | https://journals.pan.pl/Content/121895/PDF/84_3274-Billel_skl.pdf |
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