Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal si...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-10-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2017/P325-329abstr.html |
| _version_ | 1811317326921859072 |
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| author | V.F. Onyshchenko L.A. Karachevtseva O.O. Lytvynenko M.M. Plakhotnyuk O.J. Stronska |
| author_facet | V.F. Onyshchenko L.A. Karachevtseva O.O. Lytvynenko M.M. Plakhotnyuk O.J. Stronska |
| author_sort | V.F. Onyshchenko |
| collection | DOAJ |
| description | We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal silicon and n-type plate of black silicon have a high minority carrier lifetime both in the bulk and on the silicon surface, indicating a high purity of both the bulk of silicon and its surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one. |
| first_indexed | 2024-04-13T12:06:11Z |
| format | Article |
| id | doaj.art-801fd9e5367f41328992ab833fcc0856 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-04-13T12:06:11Z |
| publishDate | 2017-10-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-801fd9e5367f41328992ab833fcc08562022-12-22T02:47:39ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822017-10-0120332532910.15407/spqeo20.03.325Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramidsV.F. Onyshchenko0L.A. Karachevtseva1O.O. Lytvynenko2M.M. Plakhotnyuk3O.J. Stronska4V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Photonic Semiconductor Structure Department, 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Photonic Semiconductor Structure Department, 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Photonic Semiconductor Structure Department, 41, prospect Nauky, 03680 Kyiv, UkraineTechnical University of Denmark, Department of Micro- and Nanotechnology, Ørsteds Plads building 345 East, DK-2800 Kgs. Lyngby, DenmarkV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Photonic Semiconductor Structure Department, 41, prospect Nauky, 03680 Kyiv, UkraineWe calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal silicon and n-type plate of black silicon have a high minority carrier lifetime both in the bulk and on the silicon surface, indicating a high purity of both the bulk of silicon and its surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one.http://journal-spqeo.org.ua/n3_2017/P325-329abstr.htmleffective minority carrier lifetimeexcess minority carrierblack silicon |
| spellingShingle | V.F. Onyshchenko L.A. Karachevtseva O.O. Lytvynenko M.M. Plakhotnyuk O.J. Stronska Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids Semiconductor Physics, Quantum Electronics & Optoelectronics effective minority carrier lifetime excess minority carrier black silicon |
| title | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_full | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_fullStr | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_full_unstemmed | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_short | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_sort | effective lifetime of minority carriers in black silicon nano textured by cones and pyramids |
| topic | effective minority carrier lifetime excess minority carrier black silicon |
| url | http://journal-spqeo.org.ua/n3_2017/P325-329abstr.html |
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