Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.
| Päätekijät: | , , , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Julkaistu: |
Nature Portfolio
2016-01-01
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| Sarja: | Nature Communications |
| Linkit: | https://doi.org/10.1038/ncomms10453 |
| Yhteenveto: | Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2. |
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| ISSN: | 2041-1723 |