Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.

Manylion Llyfryddiaeth
Prif Awduron:	Doohee Cho, Sangmo Cheon, Ki-Seok Kim, Sung-Hoon Lee, Yong-Heum Cho, Sang-Wook Cheong, Han Woong Yeom
Fformat:	Erthygl
Iaith:	English
Cyhoeddwyd:	Nature Portfolio 2016-01-01
Cyfres:	Nature Communications
Mynediad Ar-lein:	https://doi.org/10.1038/ncomms10453

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