All-optical generation of static electric field in a single metal-semiconductor nanoantenna
Abstract Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it c...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2023-09-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-023-01262-8 |
| _version_ | 1797556304132177920 |
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| author | Yali Sun Artem Larin Alexey Mozharov Eduard Ageev Olesia Pashina Filipp Komissarenko Ivan Mukhin Mihail Petrov Sergey Makarov Pavel Belov Dmitry Zuev |
| author_facet | Yali Sun Artem Larin Alexey Mozharov Eduard Ageev Olesia Pashina Filipp Komissarenko Ivan Mukhin Mihail Petrov Sergey Makarov Pavel Belov Dmitry Zuev |
| author_sort | Yali Sun |
| collection | DOAJ |
| description | Abstract Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it could be extremely useful for novel nanophotonic horizons. Here, we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation. We study this field experimentally, probing it by second-harmonic generation signal, which, in our system, is time-dependent and has a non-quadratic signal/excitation power dependence. The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal. We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field. We estimate the value of optically-generated static electric field in this nanoantenna to achieve ≈108V/m. These findings pave the way for the creation of nanoantenna-based optical memory, programmable logic and neuromorphic devices. |
| first_indexed | 2024-03-10T17:00:54Z |
| format | Article |
| id | doaj.art-8051140e118b4e68932e43c6bd801697 |
| institution | Directory Open Access Journal |
| issn | 2047-7538 |
| language | English |
| last_indexed | 2024-03-10T17:00:54Z |
| publishDate | 2023-09-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj.art-8051140e118b4e68932e43c6bd8016972023-11-20T10:58:41ZengNature Publishing GroupLight: Science & Applications2047-75382023-09-0112111310.1038/s41377-023-01262-8All-optical generation of static electric field in a single metal-semiconductor nanoantennaYali Sun0Artem Larin1Alexey Mozharov2Eduard Ageev3Olesia Pashina4Filipp Komissarenko5Ivan Mukhin6Mihail Petrov7Sergey Makarov8Pavel Belov9Dmitry Zuev10School of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversityCenter for Nanotechnologies, Alferov UniversitySchool of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversityCenter for Nanotechnologies, Alferov UniversitySchool of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversitySchool of Physics and Engineering, ITMO UniversityAbstract Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it could be extremely useful for novel nanophotonic horizons. Here, we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation. We study this field experimentally, probing it by second-harmonic generation signal, which, in our system, is time-dependent and has a non-quadratic signal/excitation power dependence. The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal. We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field. We estimate the value of optically-generated static electric field in this nanoantenna to achieve ≈108V/m. These findings pave the way for the creation of nanoantenna-based optical memory, programmable logic and neuromorphic devices.https://doi.org/10.1038/s41377-023-01262-8 |
| spellingShingle | Yali Sun Artem Larin Alexey Mozharov Eduard Ageev Olesia Pashina Filipp Komissarenko Ivan Mukhin Mihail Petrov Sergey Makarov Pavel Belov Dmitry Zuev All-optical generation of static electric field in a single metal-semiconductor nanoantenna Light: Science & Applications |
| title | All-optical generation of static electric field in a single metal-semiconductor nanoantenna |
| title_full | All-optical generation of static electric field in a single metal-semiconductor nanoantenna |
| title_fullStr | All-optical generation of static electric field in a single metal-semiconductor nanoantenna |
| title_full_unstemmed | All-optical generation of static electric field in a single metal-semiconductor nanoantenna |
| title_short | All-optical generation of static electric field in a single metal-semiconductor nanoantenna |
| title_sort | all optical generation of static electric field in a single metal semiconductor nanoantenna |
| url | https://doi.org/10.1038/s41377-023-01262-8 |
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