Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma
Graphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate hol...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/12/3217 |
| _version_ | 1797502054361464832 |
|---|---|
| author | Shaoen Jin Junyu Zong Wang Chen Qichao Tian Xiaodong Qiu Gan Liu Hang Zheng Xiaoxiang Xi Libo Gao Can Wang Yi Zhang |
| author_facet | Shaoen Jin Junyu Zong Wang Chen Qichao Tian Xiaodong Qiu Gan Liu Hang Zheng Xiaoxiang Xi Libo Gao Can Wang Yi Zhang |
| author_sort | Shaoen Jin |
| collection | DOAJ |
| description | Graphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate holes, which give rise to the degradation of device performance and becomes an obstacle for the further applications. Here, with the assistance of nitrogen plasma, we successfully obtained high-quality single-layer and bilayer graphene with large-scale and uniform surface via annealing 4H-SiC(0001) wafers. The highly flat surface and ordered terraces of the samples were characterized using in situ scanning tunneling microscopy. The Dirac bands in single-layer and bilayer graphene were measured using angle-resolved photoemission spectroscopy. X-ray photoelectron spectroscopy combined with Raman spectroscopy were used to determine the composition of the samples and to ensure no intercalation or chemical reaction of nitrogen with graphene. Our work has provided an efficient way to obtain the uniform single-layer and bilayer graphene films grown on a semiconductive substrate, which would be an ideal platform for fabricating two-dimensional devices based on graphene. |
| first_indexed | 2024-03-10T03:27:23Z |
| format | Article |
| id | doaj.art-8074838d0ade4ab78732ab755903eed9 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:27:23Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-8074838d0ade4ab78732ab755903eed92023-11-23T09:49:32ZengMDPI AGNanomaterials2079-49912021-11-011112321710.3390/nano11123217Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen PlasmaShaoen Jin0Junyu Zong1Wang Chen2Qichao Tian3Xiaodong Qiu4Gan Liu5Hang Zheng6Xiaoxiang Xi7Libo Gao8Can Wang9Yi Zhang10National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaGraphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate holes, which give rise to the degradation of device performance and becomes an obstacle for the further applications. Here, with the assistance of nitrogen plasma, we successfully obtained high-quality single-layer and bilayer graphene with large-scale and uniform surface via annealing 4H-SiC(0001) wafers. The highly flat surface and ordered terraces of the samples were characterized using in situ scanning tunneling microscopy. The Dirac bands in single-layer and bilayer graphene were measured using angle-resolved photoemission spectroscopy. X-ray photoelectron spectroscopy combined with Raman spectroscopy were used to determine the composition of the samples and to ensure no intercalation or chemical reaction of nitrogen with graphene. Our work has provided an efficient way to obtain the uniform single-layer and bilayer graphene films grown on a semiconductive substrate, which would be an ideal platform for fabricating two-dimensional devices based on graphene.https://www.mdpi.com/2079-4991/11/12/3217grapheneepitaxialARPESband structureRaman spectroscopynitrogen plasma |
| spellingShingle | Shaoen Jin Junyu Zong Wang Chen Qichao Tian Xiaodong Qiu Gan Liu Hang Zheng Xiaoxiang Xi Libo Gao Can Wang Yi Zhang Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma Nanomaterials graphene epitaxial ARPES band structure Raman spectroscopy nitrogen plasma |
| title | Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma |
| title_full | Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma |
| title_fullStr | Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma |
| title_full_unstemmed | Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma |
| title_short | Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma |
| title_sort | epitaxial growth of uniform single layer and bilayer graphene with assistance of nitrogen plasma |
| topic | graphene epitaxial ARPES band structure Raman spectroscopy nitrogen plasma |
| url | https://www.mdpi.com/2079-4991/11/12/3217 |
| work_keys_str_mv | AT shaoenjin epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT junyuzong epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT wangchen epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT qichaotian epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT xiaodongqiu epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT ganliu epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT hangzheng epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT xiaoxiangxi epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT libogao epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT canwang epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma AT yizhang epitaxialgrowthofuniformsinglelayerandbilayergraphenewithassistanceofnitrogenplasma |