High write endurance up to 1012 cycles in a spin current-type magnetic memory array
We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array. Furthermore, we demonstrated an accelerated test of failure elements by increasing the write current density....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5079917 |
| _version_ | 1811281409029963776 |
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| author | Yohei Shiokawa Eiji Komura Yugo Ishitani Atsushi Tsumita Keita Suda Yuji Kakinuma Tomoyuki Sasaki |
| author_facet | Yohei Shiokawa Eiji Komura Yugo Ishitani Atsushi Tsumita Keita Suda Yuji Kakinuma Tomoyuki Sasaki |
| author_sort | Yohei Shiokawa |
| collection | DOAJ |
| description | We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array. Furthermore, we demonstrated an accelerated test of failure elements by increasing the write current density. According to cross-sectional TEM images of the failure MTJ elements, one of the failure models is caused only on the spin orbit torque (SOT) line by electrical-open and electrical-short conditions. We concluded that SC-MTJ will have strong write endurance against a high write current if the SOT-line is improved. SC-MTJ offers an alternative to spin transfer torque (STT)–MTJ as a high write endurance magnetic memory. |
| first_indexed | 2024-04-13T01:33:22Z |
| format | Article |
| id | doaj.art-80783ee055914412a307cd0607257841 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T01:33:22Z |
| publishDate | 2019-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-80783ee055914412a307cd06072578412022-12-22T03:08:28ZengAIP Publishing LLCAIP Advances2158-32262019-03-0193035236035236-410.1063/1.5079917072992ADVHigh write endurance up to 1012 cycles in a spin current-type magnetic memory arrayYohei Shiokawa0Eiji Komura1Yugo Ishitani2Atsushi Tsumita3Keita Suda4Yuji Kakinuma5Tomoyuki Sasaki6Advanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanAdvanced Products Development Center, TDK Corporation, Chiba 272-8558, JapanWe demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array. Furthermore, we demonstrated an accelerated test of failure elements by increasing the write current density. According to cross-sectional TEM images of the failure MTJ elements, one of the failure models is caused only on the spin orbit torque (SOT) line by electrical-open and electrical-short conditions. We concluded that SC-MTJ will have strong write endurance against a high write current if the SOT-line is improved. SC-MTJ offers an alternative to spin transfer torque (STT)–MTJ as a high write endurance magnetic memory.http://dx.doi.org/10.1063/1.5079917 |
| spellingShingle | Yohei Shiokawa Eiji Komura Yugo Ishitani Atsushi Tsumita Keita Suda Yuji Kakinuma Tomoyuki Sasaki High write endurance up to 1012 cycles in a spin current-type magnetic memory array AIP Advances |
| title | High write endurance up to 1012 cycles in a spin current-type magnetic memory array |
| title_full | High write endurance up to 1012 cycles in a spin current-type magnetic memory array |
| title_fullStr | High write endurance up to 1012 cycles in a spin current-type magnetic memory array |
| title_full_unstemmed | High write endurance up to 1012 cycles in a spin current-type magnetic memory array |
| title_short | High write endurance up to 1012 cycles in a spin current-type magnetic memory array |
| title_sort | high write endurance up to 1012 cycles in a spin current type magnetic memory array |
| url | http://dx.doi.org/10.1063/1.5079917 |
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