Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectr...
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MDPI AG
2023-10-01
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Online Access: | https://www.mdpi.com/1424-8220/23/20/8378 |
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author | Victor Ivanov Viktors Fjodorovs Anatoli Loutchanski Maksims Piskunovs Valerijs Ivanovs |
author_facet | Victor Ivanov Viktors Fjodorovs Anatoli Loutchanski Maksims Piskunovs Valerijs Ivanovs |
author_sort | Victor Ivanov |
collection | DOAJ |
description | This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors’ operating ability at high-gamma radiation fluxes were studied. |
first_indexed | 2024-03-10T20:54:47Z |
format | Article |
id | doaj.art-80c878d06fff4be6827e8fd00be29497 |
institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-03-10T20:54:47Z |
publishDate | 2023-10-01 |
publisher | MDPI AG |
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series | Sensors |
spelling | doaj.art-80c878d06fff4be6827e8fd00be294972023-11-19T18:01:59ZengMDPI AGSensors1424-82202023-10-012320837810.3390/s23208378Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation FluxesVictor Ivanov0Viktors Fjodorovs1Anatoli Loutchanski2Maksims Piskunovs3Valerijs Ivanovs4ZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaThis article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors’ operating ability at high-gamma radiation fluxes were studied.https://www.mdpi.com/1424-8220/23/20/8378CdZnTe detectorquasi-hemispherical detectorhigh-gamma radiation fluxIR illuminationoperating temperature |
spellingShingle | Victor Ivanov Viktors Fjodorovs Anatoli Loutchanski Maksims Piskunovs Valerijs Ivanovs Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes Sensors CdZnTe detector quasi-hemispherical detector high-gamma radiation flux IR illumination operating temperature |
title | Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes |
title_full | Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes |
title_fullStr | Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes |
title_full_unstemmed | Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes |
title_short | Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes |
title_sort | use of cdznte quasi hemispherical detectors under the impact of low temperatures and high gamma radiation fluxes |
topic | CdZnTe detector quasi-hemispherical detector high-gamma radiation flux IR illumination operating temperature |
url | https://www.mdpi.com/1424-8220/23/20/8378 |
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