Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes

This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectr...

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Main Authors: Victor Ivanov, Viktors Fjodorovs, Anatoli Loutchanski, Maksims Piskunovs, Valerijs Ivanovs
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/23/20/8378
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author Victor Ivanov
Viktors Fjodorovs
Anatoli Loutchanski
Maksims Piskunovs
Valerijs Ivanovs
author_facet Victor Ivanov
Viktors Fjodorovs
Anatoli Loutchanski
Maksims Piskunovs
Valerijs Ivanovs
author_sort Victor Ivanov
collection DOAJ
description This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors’ operating ability at high-gamma radiation fluxes were studied.
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spelling doaj.art-80c878d06fff4be6827e8fd00be294972023-11-19T18:01:59ZengMDPI AGSensors1424-82202023-10-012320837810.3390/s23208378Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation FluxesVictor Ivanov0Viktors Fjodorovs1Anatoli Loutchanski2Maksims Piskunovs3Valerijs Ivanovs4ZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaZRF Ritec SIA, Gustava Zemgala Av. 71A, LV-1039 Riga, LatviaThis article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors’ operating ability at high-gamma radiation fluxes were studied.https://www.mdpi.com/1424-8220/23/20/8378CdZnTe detectorquasi-hemispherical detectorhigh-gamma radiation fluxIR illuminationoperating temperature
spellingShingle Victor Ivanov
Viktors Fjodorovs
Anatoli Loutchanski
Maksims Piskunovs
Valerijs Ivanovs
Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
Sensors
CdZnTe detector
quasi-hemispherical detector
high-gamma radiation flux
IR illumination
operating temperature
title Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
title_full Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
title_fullStr Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
title_full_unstemmed Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
title_short Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes
title_sort use of cdznte quasi hemispherical detectors under the impact of low temperatures and high gamma radiation fluxes
topic CdZnTe detector
quasi-hemispherical detector
high-gamma radiation flux
IR illumination
operating temperature
url https://www.mdpi.com/1424-8220/23/20/8378
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