A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT
To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this p...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/6/1276 |
| _version_ | 1797593455175663616 |
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| author | Jiaxuan Li Yang Yuan Bin Yuan Jingxin Fan Jialong Zeng Zhongjun Yu |
| author_facet | Jiaxuan Li Yang Yuan Bin Yuan Jingxin Fan Jialong Zeng Zhongjun Yu |
| author_sort | Jiaxuan Li |
| collection | DOAJ |
| description | To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 × 1.2 mm<sup>2</sup> and included input and output test pads. |
| first_indexed | 2024-03-11T02:08:22Z |
| format | Article |
| id | doaj.art-80c91043b5e246759c831daab84d1e3e |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T02:08:22Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-80c91043b5e246759c831daab84d1e3e2023-11-18T11:40:49ZengMDPI AGMicromachines2072-666X2023-06-01146127610.3390/mi14061276A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMTJiaxuan Li0Yang Yuan1Bin Yuan2Jingxin Fan3Jialong Zeng4Zhongjun Yu5Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaAerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaAerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaAerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaAerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaAerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, ChinaTo meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 × 1.2 mm<sup>2</sup> and included input and output test pads.https://www.mdpi.com/2072-666X/14/6/1276gallium arsenide (GaAs)Ku-bandmicrowave monolithic integrated circuit (MMIC)broadband power amplifierstacked FET |
| spellingShingle | Jiaxuan Li Yang Yuan Bin Yuan Jingxin Fan Jialong Zeng Zhongjun Yu A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT Micromachines gallium arsenide (GaAs) Ku-band microwave monolithic integrated circuit (MMIC) broadband power amplifier stacked FET |
| title | A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT |
| title_full | A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT |
| title_fullStr | A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT |
| title_full_unstemmed | A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT |
| title_short | A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT |
| title_sort | ku band broadband stacked fet power amplifier using 0 15 μm gaas phemt |
| topic | gallium arsenide (GaAs) Ku-band microwave monolithic integrated circuit (MMIC) broadband power amplifier stacked FET |
| url | https://www.mdpi.com/2072-666X/14/6/1276 |
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