A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this p...

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Bibliographic Details
Main Authors:	Jiaxuan Li, Yang Yuan, Bin Yuan, Jingxin Fan, Jialong Zeng, Zhongjun Yu
Format:	Article
Language:	English
Published:	MDPI AG 2023-06-01
Series:	Micromachines
Subjects:	gallium arsenide (GaAs) Ku-band microwave monolithic integrated circuit (MMIC) broadband power amplifier stacked FET
Online Access:	https://www.mdpi.com/2072-666X/14/6/1276

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