Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Defects play a crucial role in modulating the properties of solid-state materials by inducing localized states that often benefit magnetic moments. Recently, direct experimental observations have shown the appearance of bunches of eight-atom-ring line defects in the T-phase VSe2 monolayer, a remarka...

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Bibliographic Details
Main Authors: Xuelian Sun, Xinxin Jiang, Zhikuan Wang, Xuhui Xu, Lei Yang, Quan Gao, Dongmei Li, Bin Cui, Desheng Liu
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Results in Physics
Subjects:
Line defect
Magnetic two-dimensional material
Negative differential resistance
Spin filtering effect
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723003467

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