Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers
There are two mechanisms which could enhance spin-dependent scattering in a low dimensional Pt/Ferromagnetic metal structure. One is magnetic proximity effect. The other is spin orbit coupling proximity effect which was suggested recently. This work demonstrates that, through a series of experiments...
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2016-02-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4942489 |
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author | Y. Q. Zhang N. Y. Sun W. R. Che R. Shan Z. G. Zhu |
author_facet | Y. Q. Zhang N. Y. Sun W. R. Che R. Shan Z. G. Zhu |
author_sort | Y. Q. Zhang |
collection | DOAJ |
description | There are two mechanisms which could enhance spin-dependent scattering in a low dimensional Pt/Ferromagnetic metal structure. One is magnetic proximity effect. The other is spin orbit coupling proximity effect which was suggested recently. This work demonstrates that, through a series of experiments on anomalous Hall effect, the spin orbit coupling proximity effect dominates the enhancement in very thin Pt/Permalloy bilayers. It may help to find a way to optimize magnetic transport property of spintronics devices in which the spin orbit coupling is deeply involved. |
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id | doaj.art-80d5b3c81f7646ca87bdd80984d8fcd2 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-21T19:55:00Z |
publishDate | 2016-02-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-80d5b3c81f7646ca87bdd80984d8fcd22022-12-21T18:52:07ZengAIP Publishing LLCAIP Advances2158-32262016-02-0162025214025214-610.1063/1.4942489061602ADVOrigin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayersY. Q. Zhang0N. Y. Sun1W. R. Che2R. Shan3Z. G. Zhu4Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, ChinaShanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, ChinaShanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, ChinaShanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, ChinaSchool of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaThere are two mechanisms which could enhance spin-dependent scattering in a low dimensional Pt/Ferromagnetic metal structure. One is magnetic proximity effect. The other is spin orbit coupling proximity effect which was suggested recently. This work demonstrates that, through a series of experiments on anomalous Hall effect, the spin orbit coupling proximity effect dominates the enhancement in very thin Pt/Permalloy bilayers. It may help to find a way to optimize magnetic transport property of spintronics devices in which the spin orbit coupling is deeply involved.http://dx.doi.org/10.1063/1.4942489 |
spellingShingle | Y. Q. Zhang N. Y. Sun W. R. Che R. Shan Z. G. Zhu Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers AIP Advances |
title | Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers |
title_full | Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers |
title_fullStr | Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers |
title_full_unstemmed | Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers |
title_short | Origin of enhanced anomalous Hall effect in ultrathin Pt/permalloy bilayers |
title_sort | origin of enhanced anomalous hall effect in ultrathin pt permalloy bilayers |
url | http://dx.doi.org/10.1063/1.4942489 |
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