Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique
In this work, the effect of annealing temperature on the electrical properties are studied of p-Se/ n-Si solar cell, which p-Se are deposit by DC planar magnetron sputtering technique on crystal silicon. The chamber was pumped down to 2×10−5 mbar before admitting the gas in. The gas was Ar. The spu...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2010-12-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/835 |
| _version_ | 1827990785526595584 |
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| author | Kadhim A. Al-Hamdani |
| author_facet | Kadhim A. Al-Hamdani |
| author_sort | Kadhim A. Al-Hamdani |
| collection | DOAJ |
| description |
In this work, the effect of annealing temperature on the electrical properties are studied of p-Se/ n-Si solar cell, which p-Se are deposit by DC planar magnetron sputtering technique on crystal silicon. The chamber was pumped down to 2×10−5 mbar before admitting the gas in. The gas was Ar. The sputtering pressure varied within the range of 4x10-1 - 8x10-2mbar by adjusting the pumping speed through the opening control of throttle valve. The electrical properties are included the C-V and I-V measurements. From C-V measurements, the Vbi are calculated while from I-V measurements, the efficiency of solar cell is calculated.
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| first_indexed | 2024-04-10T00:40:45Z |
| format | Article |
| id | doaj.art-81147aee771b46f18f60aac9669b1ad8 |
| institution | Directory Open Access Journal |
| issn | 2070-4003 2664-5548 |
| language | English |
| last_indexed | 2024-04-10T00:40:45Z |
| publishDate | 2010-12-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Iraqi Journal of Physics |
| spelling | doaj.art-81147aee771b46f18f60aac9669b1ad82023-03-14T05:48:00ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482010-12-01813Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering techniqueKadhim A. Al-Hamdani0Department of Physics, College of Science, University of Baghdad In this work, the effect of annealing temperature on the electrical properties are studied of p-Se/ n-Si solar cell, which p-Se are deposit by DC planar magnetron sputtering technique on crystal silicon. The chamber was pumped down to 2×10−5 mbar before admitting the gas in. The gas was Ar. The sputtering pressure varied within the range of 4x10-1 - 8x10-2mbar by adjusting the pumping speed through the opening control of throttle valve. The electrical properties are included the C-V and I-V measurements. From C-V measurements, the Vbi are calculated while from I-V measurements, the efficiency of solar cell is calculated. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/835Se/Si heterojunction DC planar magnetron sputtering |
| spellingShingle | Kadhim A. Al-Hamdani Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique Iraqi Journal of Physics Se/Si heterojunction DC planar magnetron sputtering |
| title | Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique |
| title_full | Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique |
| title_fullStr | Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique |
| title_full_unstemmed | Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique |
| title_short | Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique |
| title_sort | current voltage and capacitance voltage characteristics of se si heterojunction prepared by dc planar magnetron sputtering technique |
| topic | Se/Si heterojunction DC planar magnetron sputtering |
| url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/835 |
| work_keys_str_mv | AT kadhimaalhamdani currentvoltageandcapacitancevoltagecharacteristicsofsesiheterojunctionpreparedbydcplanarmagnetronsputteringtechnique |