Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode
In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thicknes...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/11/2005 |
| _version_ | 1797458383106736128 |
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| author | Sung-Hoon Lee Ho-Young Cha |
| author_facet | Sung-Hoon Lee Ho-Young Cha |
| author_sort | Sung-Hoon Lee |
| collection | DOAJ |
| description | In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thickness, and interface charge density of MIS. The boundary conditions are defined based on the maximum allowed electric field strengths at the dielectric and semiconductor regions. The developed model was validated using TCAD simulations. As an example, a 1 kV GaN vertical PN diode was designed using the optimized FP structure, which exhibited the same breakdown voltage characteristics as an ideal one-dimensional PN diode structure without edge effects. This proposed simple analytic model offers a design guideline for the trench MIS FP for the edge termination of vertical PN diodes, enabling efficient design without the need for extensive TCAD simulations, thus saving significant time and effort. |
| first_indexed | 2024-03-09T16:36:19Z |
| format | Article |
| id | doaj.art-8126395f8aa646e2bfdedb5e1b04f92c |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T16:36:19Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-8126395f8aa646e2bfdedb5e1b04f92c2023-11-24T14:56:10ZengMDPI AGMicromachines2072-666X2023-10-011411200510.3390/mi14112005Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN DiodeSung-Hoon Lee0Ho-Young Cha1School of Electronic and Electrical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of KoreaSchool of Electronic and Electrical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of KoreaIn this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thickness, and interface charge density of MIS. The boundary conditions are defined based on the maximum allowed electric field strengths at the dielectric and semiconductor regions. The developed model was validated using TCAD simulations. As an example, a 1 kV GaN vertical PN diode was designed using the optimized FP structure, which exhibited the same breakdown voltage characteristics as an ideal one-dimensional PN diode structure without edge effects. This proposed simple analytic model offers a design guideline for the trench MIS FP for the edge termination of vertical PN diodes, enabling efficient design without the need for extensive TCAD simulations, thus saving significant time and effort.https://www.mdpi.com/2072-666X/14/11/2005trench field platevertical diodeedge terminationanalytic modelbreakdown voltage |
| spellingShingle | Sung-Hoon Lee Ho-Young Cha Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode Micromachines trench field plate vertical diode edge termination analytic model breakdown voltage |
| title | Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode |
| title_full | Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode |
| title_fullStr | Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode |
| title_full_unstemmed | Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode |
| title_short | Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode |
| title_sort | design of trench mis field plate structure for edge termination of gan vertical pn diode |
| topic | trench field plate vertical diode edge termination analytic model breakdown voltage |
| url | https://www.mdpi.com/2072-666X/14/11/2005 |
| work_keys_str_mv | AT sunghoonlee designoftrenchmisfieldplatestructureforedgeterminationofganverticalpndiode AT hoyoungcha designoftrenchmisfieldplatestructureforedgeterminationofganverticalpndiode |