Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature
Abstract Cu1.8S has been considered as a potential thermoelectric (TE) material for its stable electrical and thermal properties, environmental benignity, and low cost. Herein, the TE properties of nanostructured Cu1.8S1−x Te x (0 ⩽ x ⩽ 0.2) bulks fabricated by a facile process combining mechanical...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Tsinghua University Press
2020-07-01
|
| Series: | Journal of Advanced Ceramics |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40145-020-0385-6 |
| _version_ | 1797716937124347904 |
|---|---|
| author | Rui Zhang Jun Pei Zhi-Jia Han Yin Wu Zhao Zhao Bo-Ping Zhang |
| author_facet | Rui Zhang Jun Pei Zhi-Jia Han Yin Wu Zhao Zhao Bo-Ping Zhang |
| author_sort | Rui Zhang |
| collection | DOAJ |
| description | Abstract Cu1.8S has been considered as a potential thermoelectric (TE) material for its stable electrical and thermal properties, environmental benignity, and low cost. Herein, the TE properties of nanostructured Cu1.8S1−x Te x (0 ⩽ x ⩽ 0.2) bulks fabricated by a facile process combining mechanical alloying (MA) and room-temperature high-pressure sintering (RT-HPS) technique were optimized via eliminating the volatilization of S element and suppressing grain growth. Experimentally, a single phase of Cu1.8S was obtained at x = 0, and a second Cu1.96S phase formed in all Cu1.8S1−x Te x samples when 0.05 ⩽ x ⩽ 0.125. With further increasing x to 0.15 ⩽ x ⩽ 0.2, the Cu2−z Te phase was detected and the samples consisted of Cu1.8S, Cu1.96S, and Cu2−z Te phases. Benefiting from a modified band structure and the coexisted phases of Cu1.96S and Cu2−z Te, the power factor is enhanced in all Cu1.8S1−x Te x (0.05 ⩽ x ⩽ 0.2) alloys. Combining with a drastic decrease in the thermal conductivity due to the strengthened phonon scatterings from multiscale defects introduced by Te doping and nano-grain boundaries, a maximum figure of merit (ZT) of 0.352 is reached at 623 K for Cu1.8S0.875Te0.125, which is 171% higher than that of Cu1.8S (0.130). The study demonstrates that doping Te is an effective strategy to improve the TE performance of Cu1.8S based materials and the proposed facile method combing MA and RT-HPS is a potential way to fabricate nanostructured bulks. |
| first_indexed | 2024-03-12T08:28:55Z |
| format | Article |
| id | doaj.art-81597ef05cc14d15a8a85893cac5ad0f |
| institution | Directory Open Access Journal |
| issn | 2226-4108 2227-8508 |
| language | English |
| last_indexed | 2024-03-12T08:28:55Z |
| publishDate | 2020-07-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Journal of Advanced Ceramics |
| spelling | doaj.art-81597ef05cc14d15a8a85893cac5ad0f2023-09-02T17:52:49ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082020-07-019553554310.1007/s40145-020-0385-6Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperatureRui Zhang0Jun Pei1Zhi-Jia Han2Yin Wu3Zhao Zhao4Bo-Ping Zhang5Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingBeijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingBeijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingBeijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingBeijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingBeijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology BeijingAbstract Cu1.8S has been considered as a potential thermoelectric (TE) material for its stable electrical and thermal properties, environmental benignity, and low cost. Herein, the TE properties of nanostructured Cu1.8S1−x Te x (0 ⩽ x ⩽ 0.2) bulks fabricated by a facile process combining mechanical alloying (MA) and room-temperature high-pressure sintering (RT-HPS) technique were optimized via eliminating the volatilization of S element and suppressing grain growth. Experimentally, a single phase of Cu1.8S was obtained at x = 0, and a second Cu1.96S phase formed in all Cu1.8S1−x Te x samples when 0.05 ⩽ x ⩽ 0.125. With further increasing x to 0.15 ⩽ x ⩽ 0.2, the Cu2−z Te phase was detected and the samples consisted of Cu1.8S, Cu1.96S, and Cu2−z Te phases. Benefiting from a modified band structure and the coexisted phases of Cu1.96S and Cu2−z Te, the power factor is enhanced in all Cu1.8S1−x Te x (0.05 ⩽ x ⩽ 0.2) alloys. Combining with a drastic decrease in the thermal conductivity due to the strengthened phonon scatterings from multiscale defects introduced by Te doping and nano-grain boundaries, a maximum figure of merit (ZT) of 0.352 is reached at 623 K for Cu1.8S0.875Te0.125, which is 171% higher than that of Cu1.8S (0.130). The study demonstrates that doping Te is an effective strategy to improve the TE performance of Cu1.8S based materials and the proposed facile method combing MA and RT-HPS is a potential way to fabricate nanostructured bulks.https://doi.org/10.1007/s40145-020-0385-6Cu1.8STe dopingnanostructurehigh pressurethermoelectric (TE) |
| spellingShingle | Rui Zhang Jun Pei Zhi-Jia Han Yin Wu Zhao Zhao Bo-Ping Zhang Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature Journal of Advanced Ceramics Cu1.8S Te doping nanostructure high pressure thermoelectric (TE) |
| title | Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature |
| title_full | Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature |
| title_fullStr | Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature |
| title_full_unstemmed | Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature |
| title_short | Optimal performance of Cu1.8S1−x Te x thermoelectric materials fabricated via high-pressure process at room temperature |
| title_sort | optimal performance of cu1 8s1 x te x thermoelectric materials fabricated via high pressure process at room temperature |
| topic | Cu1.8S Te doping nanostructure high pressure thermoelectric (TE) |
| url | https://doi.org/10.1007/s40145-020-0385-6 |
| work_keys_str_mv | AT ruizhang optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature AT junpei optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature AT zhijiahan optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature AT yinwu optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature AT zhaozhao optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature AT bopingzhang optimalperformanceofcu18s1xtexthermoelectricmaterialsfabricatedviahighpressureprocessatroomtemperature |