Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators
In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SA...
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MDPI AG
2021-09-01
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| author | Wen Chen Linwei Zhang Shangshu Yang Wenhan Jia Songsong Zhang Yuandong Gu Liang Lou Guoqiang Wu |
| author_facet | Wen Chen Linwei Zhang Shangshu Yang Wenhan Jia Songsong Zhang Yuandong Gu Liang Lou Guoqiang Wu |
| author_sort | Wen Chen |
| collection | DOAJ |
| description | In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>F</mi></mrow></semantics></math></inline-formula>), effective coupling coefficient (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msubsup><mi>k</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></semantics></math></inline-formula>) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msubsup><mi>k</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></semantics></math></inline-formula> of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>F</mi></mrow></semantics></math></inline-formula> of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip. |
| first_indexed | 2024-03-10T07:26:13Z |
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| spelling | doaj.art-81611945cb63499f867ec2deb54808722023-11-22T14:16:52ZengMDPI AGMicromachines2072-666X2021-09-01129111810.3390/mi12091118Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave ResonatorsWen Chen0Linwei Zhang1Shangshu Yang2Wenhan Jia3Songsong Zhang4Yuandong Gu5Liang Lou6Guoqiang Wu7Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaShanghai Industrial Technology Research Institute, Shanghai 201899, ChinaInstitute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaInstitute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaShanghai Industrial Technology Research Institute, Shanghai 201899, ChinaShanghai Industrial Technology Research Institute, Shanghai 201899, ChinaShanghai Industrial Technology Research Institute, Shanghai 201899, ChinaInstitute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaIn this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>F</mi></mrow></semantics></math></inline-formula>), effective coupling coefficient (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msubsup><mi>k</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></semantics></math></inline-formula>) and frequency response. The fabricated QSAW resonator has demonstrated a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msubsup><mi>k</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></semantics></math></inline-formula> of 0.291%, series resonant frequency of 422.50 MHz, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>F</mi></mrow></semantics></math></inline-formula> of −23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.https://www.mdpi.com/2072-666X/12/9/1118quasi-surface acoustic wave (QSAW) resonatormicroelectromechnical systems (MEMS)finite element analysisaluminum nitride |
| spellingShingle | Wen Chen Linwei Zhang Shangshu Yang Wenhan Jia Songsong Zhang Yuandong Gu Liang Lou Guoqiang Wu Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators Micromachines quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride |
| title | Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators |
| title_full | Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators |
| title_fullStr | Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators |
| title_full_unstemmed | Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators |
| title_short | Three-Dimensional Finite Element Analysis and Characterization of Quasi-Surface Acoustic Wave Resonators |
| title_sort | three dimensional finite element analysis and characterization of quasi surface acoustic wave resonators |
| topic | quasi-surface acoustic wave (QSAW) resonator microelectromechnical systems (MEMS) finite element analysis aluminum nitride |
| url | https://www.mdpi.com/2072-666X/12/9/1118 |
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