Hall effect in charged conducting ferroelectric domain walls
Conduction in ferroelectric domain walls is now an established phenomenon, yet fundamental aspects of transport physics remain elusive. Here, Campbellet al. report the type, density and mobility of carriers in conducting domain walls in ytterbium manganite using nanoscale Hall effect measurements.
Main Authors: | M. P. Campbell, J.P.V. McConville, R.G.P. McQuaid, D. Prabhakaran, A. Kumar, J. M. Gregg |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2016-12-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms13764 |
Similar Items
-
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
by: Raymond G.P. McQuaid, et al.
Published: (2017-05-01) -
Tuning Local Conductance to Enable Demonstrator Ferroelectric Domain Wall Diodes and Logic Gates
by: Ahmet Suna, et al.
Published: (2023-05-01) -
Fractional fermion number and Hall conductivity of domain walls
by: J. Mateos Guilarte, et al.
Published: (2019-10-01) -
Field enhancement of electronic conductance at ferroelectric domain walls
by: Rama K. Vasudevan, et al.
Published: (2017-11-01) -
Phase transitions in ferroelectric domain walls
by: E. A. Eliseev, et al.
Published: (2022-12-01)