Fractal analysis of the surface of indium–tin-oxide

In this study, indium-tin-oxide thin films in different thickness ranges were prepared by electron beam evaporation method on the glass substrate at room temperature. The thicknesses of films were 100, 150 and 250nm. Using fractal analysis, morphological characteristics of surface films thickness in...

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Main Authors: D Raoufi, F Hosseinpanahi
Format: Article
Language:English
Published: Isfahan University of Technology 2012-12-01
Series:Iranian Journal of Physics Research
Subjects:
Online Access:http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-589&slc_lang=en&sid=1
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author D Raoufi
F Hosseinpanahi
author_facet D Raoufi
F Hosseinpanahi
author_sort D Raoufi
collection DOAJ
description In this study, indium-tin-oxide thin films in different thickness ranges were prepared by electron beam evaporation method on the glass substrate at room temperature. The thicknesses of films were 100, 150 and 250nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results showed that by increasing thickness, surface roughness (RMS) and lateral correlation length ( x ) were decreased. Also, the roughness exponent a and growth exponent b were determined to be 0.72 ± 0.01 and 0.11, respectively. Based on these results, we understand that the growth films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.
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spelling doaj.art-816b12cd6b814dfaa11d92239dce037c2022-12-22T01:43:47ZengIsfahan University of TechnologyIranian Journal of Physics Research1682-69572012-12-01123245251Fractal analysis of the surface of indium–tin-oxideD RaoufiF HosseinpanahiIn this study, indium-tin-oxide thin films in different thickness ranges were prepared by electron beam evaporation method on the glass substrate at room temperature. The thicknesses of films were 100, 150 and 250nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results showed that by increasing thickness, surface roughness (RMS) and lateral correlation length ( x ) were decreased. Also, the roughness exponent a and growth exponent b were determined to be 0.72 ± 0.01 and 0.11, respectively. Based on these results, we understand that the growth films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-589&slc_lang=en&sid=1ITO; thin filmfractal analysismorphology
spellingShingle D Raoufi
F Hosseinpanahi
Fractal analysis of the surface of indium–tin-oxide
Iranian Journal of Physics Research
ITO; thin film
fractal analysis
morphology
title Fractal analysis of the surface of indium–tin-oxide
title_full Fractal analysis of the surface of indium–tin-oxide
title_fullStr Fractal analysis of the surface of indium–tin-oxide
title_full_unstemmed Fractal analysis of the surface of indium–tin-oxide
title_short Fractal analysis of the surface of indium–tin-oxide
title_sort fractal analysis of the surface of indium tin oxide
topic ITO; thin film
fractal analysis
morphology
url http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-589&slc_lang=en&sid=1
work_keys_str_mv AT draoufi fractalanalysisofthesurfaceofindiumtinoxide
AT fhosseinpanahi fractalanalysisofthesurfaceofindiumtinoxide