High sensitivity HgTe room temperature terahertz photodetector
The advent of topological semi-metals with peculiar band structure and exotic quantum-transport provides novel pathways for upgrading the performance of terahertz (THz) detection. HgTe is among such a candidate with the unique advantages of a negative bandgap, ultra-high mobility, and thermoelectric...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-04-01
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| Series: | APL Photonics |
| Online Access: | http://dx.doi.org/10.1063/5.0144569 |
| _version_ | 1797772854515728384 |
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| author | Xinrong Zuo Chenwei Zhu Chenyu Yao Zhen Hu Yan Wu Liuyan Fan Zhifeng Li Jun He Xiaoshuang Chen Pingping Chen Xiaoming Yuan Lin Wang Wei Lu |
| author_facet | Xinrong Zuo Chenwei Zhu Chenyu Yao Zhen Hu Yan Wu Liuyan Fan Zhifeng Li Jun He Xiaoshuang Chen Pingping Chen Xiaoming Yuan Lin Wang Wei Lu |
| author_sort | Xinrong Zuo |
| collection | DOAJ |
| description | The advent of topological semi-metals with peculiar band structure and exotic quantum-transport provides novel pathways for upgrading the performance of terahertz (THz) detection. HgTe is among such a candidate with the unique advantages of a negative bandgap, ultra-high mobility, and thermoelectricity, which ignites the possibility of addressing the technical bottlenecks of traditional routes for THz detection. Herein, for the first time, we report large-area (3 in.) growth of high-mobility HgTe thin-film via molecular-beam epitaxial and the implementation of bow-tie antennas based HgTe THz-detector with the abilities of ultrafast response, low noise, and high ambient-stability at room temperature. By exploration of strong light-coupling and superior hot-carrier transport, the bow-tie antenna-based HgTe photodetector can achieve a responsivity of 0.04 A/W and a noise equivalent power of less than 0.6 nW/Hz1/2 at 0.3 THz. Furthermore, the sensitivity can be further improved by nearly an order of magnitude up to 0.36 A/W at 0.3 THz by incorporating a short channel asymmetric cubic resonator. The reported performances allow a realistic exploration of high-mobility bulk states in topological semimetals for large area, fast-imaging applications in the THz band. |
| first_indexed | 2024-03-12T21:57:07Z |
| format | Article |
| id | doaj.art-8171505bdb664aaa90eec4ec9c934bcf |
| institution | Directory Open Access Journal |
| issn | 2378-0967 |
| language | English |
| last_indexed | 2024-03-12T21:57:07Z |
| publishDate | 2023-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Photonics |
| spelling | doaj.art-8171505bdb664aaa90eec4ec9c934bcf2023-07-25T15:16:16ZengAIP Publishing LLCAPL Photonics2378-09672023-04-0184046109046109-1110.1063/5.0144569High sensitivity HgTe room temperature terahertz photodetectorXinrong Zuo0Chenwei Zhu1Chenyu Yao2Zhen Hu3Yan Wu4Liuyan Fan5Zhifeng Li6Jun He7Xiaoshuang Chen8Pingping Chen9Xiaoming Yuan10Lin Wang11Wei Lu12Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South Universitqy, 932 South Lushan Road, Changsha, Hunan 410083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South Universitqy, 932 South Lushan Road, Changsha, Hunan 410083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South Universitqy, 932 South Lushan Road, Changsha, Hunan 410083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaState Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaThe advent of topological semi-metals with peculiar band structure and exotic quantum-transport provides novel pathways for upgrading the performance of terahertz (THz) detection. HgTe is among such a candidate with the unique advantages of a negative bandgap, ultra-high mobility, and thermoelectricity, which ignites the possibility of addressing the technical bottlenecks of traditional routes for THz detection. Herein, for the first time, we report large-area (3 in.) growth of high-mobility HgTe thin-film via molecular-beam epitaxial and the implementation of bow-tie antennas based HgTe THz-detector with the abilities of ultrafast response, low noise, and high ambient-stability at room temperature. By exploration of strong light-coupling and superior hot-carrier transport, the bow-tie antenna-based HgTe photodetector can achieve a responsivity of 0.04 A/W and a noise equivalent power of less than 0.6 nW/Hz1/2 at 0.3 THz. Furthermore, the sensitivity can be further improved by nearly an order of magnitude up to 0.36 A/W at 0.3 THz by incorporating a short channel asymmetric cubic resonator. The reported performances allow a realistic exploration of high-mobility bulk states in topological semimetals for large area, fast-imaging applications in the THz band.http://dx.doi.org/10.1063/5.0144569 |
| spellingShingle | Xinrong Zuo Chenwei Zhu Chenyu Yao Zhen Hu Yan Wu Liuyan Fan Zhifeng Li Jun He Xiaoshuang Chen Pingping Chen Xiaoming Yuan Lin Wang Wei Lu High sensitivity HgTe room temperature terahertz photodetector APL Photonics |
| title | High sensitivity HgTe room temperature terahertz photodetector |
| title_full | High sensitivity HgTe room temperature terahertz photodetector |
| title_fullStr | High sensitivity HgTe room temperature terahertz photodetector |
| title_full_unstemmed | High sensitivity HgTe room temperature terahertz photodetector |
| title_short | High sensitivity HgTe room temperature terahertz photodetector |
| title_sort | high sensitivity hgte room temperature terahertz photodetector |
| url | http://dx.doi.org/10.1063/5.0144569 |
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