Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x
We report on transparent thin film field effect transistors (TFTs) based on polycrystalline SnO2−x and epitaxial SnO2−x. Polycrystalline SnO2−x TFTs of the top and the bottom gate geometries exhibited high mobility values of 145.7 cm2/V s and 160.0 cm2/V s, respectively. However, our polycrystalline...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5143468 |
| _version_ | 1818037255711752192 |
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| author | Yeaju Jang Hahoon Lee Kookrin Char |
| author_facet | Yeaju Jang Hahoon Lee Kookrin Char |
| author_sort | Yeaju Jang |
| collection | DOAJ |
| description | We report on transparent thin film field effect transistors (TFTs) based on polycrystalline SnO2−x and epitaxial SnO2−x. Polycrystalline SnO2−x TFTs of the top and the bottom gate geometries exhibited high mobility values of 145.7 cm2/V s and 160.0 cm2/V s, respectively. However, our polycrystalline SnO2−x devices showed non-ideal behaviors in their output and transfer characteristics; a large hysteresis was observed along with large voltage dependence. The probable origin of these non-ideal behaviors is the barrier formation across grain boundaries of polycrystalline SnO2. To confirm this, we used SnO2−x epitaxially grown on r-plane sapphire substrates as a channel layer and compared their performance with those of polycrystalline SnO2−x based TFTs. Although the mobility of epitaxial SnO2−x TFTs was not as high as that of the polycrystalline SnO2−x TFTs, the non-ideal voltage dependence in output and transfer characteristics disappeared. We believe our direct experimental comparison clearly demonstrates the grain boundary issue in polycrystalline SnO2−x. |
| first_indexed | 2024-12-10T07:23:57Z |
| format | Article |
| id | doaj.art-818b3bf753334633a6071b67374aa4d5 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T07:23:57Z |
| publishDate | 2020-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-818b3bf753334633a6071b67374aa4d52022-12-22T01:57:45ZengAIP Publishing LLCAIP Advances2158-32262020-03-01103035011035011-710.1063/1.5143468Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−xYeaju Jang0Hahoon Lee1Kookrin Char2Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South KoreaDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South KoreaDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South KoreaWe report on transparent thin film field effect transistors (TFTs) based on polycrystalline SnO2−x and epitaxial SnO2−x. Polycrystalline SnO2−x TFTs of the top and the bottom gate geometries exhibited high mobility values of 145.7 cm2/V s and 160.0 cm2/V s, respectively. However, our polycrystalline SnO2−x devices showed non-ideal behaviors in their output and transfer characteristics; a large hysteresis was observed along with large voltage dependence. The probable origin of these non-ideal behaviors is the barrier formation across grain boundaries of polycrystalline SnO2. To confirm this, we used SnO2−x epitaxially grown on r-plane sapphire substrates as a channel layer and compared their performance with those of polycrystalline SnO2−x based TFTs. Although the mobility of epitaxial SnO2−x TFTs was not as high as that of the polycrystalline SnO2−x TFTs, the non-ideal voltage dependence in output and transfer characteristics disappeared. We believe our direct experimental comparison clearly demonstrates the grain boundary issue in polycrystalline SnO2−x.http://dx.doi.org/10.1063/1.5143468 |
| spellingShingle | Yeaju Jang Hahoon Lee Kookrin Char Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x AIP Advances |
| title | Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x |
| title_full | Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x |
| title_fullStr | Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x |
| title_full_unstemmed | Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x |
| title_short | Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x |
| title_sort | transparent thin film transistors of polycrystalline sno2 x and epitaxial sno2 x |
| url | http://dx.doi.org/10.1063/1.5143468 |
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