Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...
| Автори: | , , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
MDPI AG
2020-04-01
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| Серія: | Nanomaterials |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2079-4991/10/4/803 |