Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode
In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/11/1639 |
| _version_ | 1818251936108904448 |
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| author | Chun-Yu Lee Ya-Pei Kuo Peng-Yu Chen Hsieh-Hsing Lu Ming Yi Lin |
| author_facet | Chun-Yu Lee Ya-Pei Kuo Peng-Yu Chen Hsieh-Hsing Lu Ming Yi Lin |
| author_sort | Chun-Yu Lee |
| collection | DOAJ |
| description | In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure. |
| first_indexed | 2024-12-12T16:16:12Z |
| format | Article |
| id | doaj.art-81b0aa9cf40b43d4a5f2480980b2fad7 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-12T16:16:12Z |
| publishDate | 2019-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-81b0aa9cf40b43d4a5f2480980b2fad72022-12-22T00:19:06ZengMDPI AGNanomaterials2079-49912019-11-01911163910.3390/nano9111639nano9111639Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting DiodeChun-Yu Lee0Ya-Pei Kuo1Peng-Yu Chen2Hsieh-Hsing Lu3Ming Yi Lin4AU Optronics Corporation, Hsinchu 30078, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanDepartment of Electrical Engineering, National United University, Miaoli 36003, TaiwanIn this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.https://www.mdpi.com/2079-4991/9/11/1639qledstop-emissionmicrocavity |
| spellingShingle | Chun-Yu Lee Ya-Pei Kuo Peng-Yu Chen Hsieh-Hsing Lu Ming Yi Lin Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode Nanomaterials qleds top-emission microcavity |
| title | Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode |
| title_full | Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode |
| title_fullStr | Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode |
| title_full_unstemmed | Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode |
| title_short | Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode |
| title_sort | influence of annealing temperature on weak cavity top emission red quantum dot light emitting diode |
| topic | qleds top-emission microcavity |
| url | https://www.mdpi.com/2079-4991/9/11/1639 |
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