Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates
Abstract Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-12-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202101502 |
| _version_ | 1818722996901117952 |
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| author | Moon Hyo Kang John Armitage Zahra Andaji‐Garmaroudi Henning Sirringhaus |
| author_facet | Moon Hyo Kang John Armitage Zahra Andaji‐Garmaroudi Henning Sirringhaus |
| author_sort | Moon Hyo Kang |
| collection | DOAJ |
| description | Abstract Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V−1 s−1 with high on–off current ratio of 108. The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low‐temperature solution‐processed metal oxide semiconductors. |
| first_indexed | 2024-12-17T21:03:30Z |
| format | Article |
| id | doaj.art-81b8fce73d8647ba87d15a37673a6eef |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-17T21:03:30Z |
| publishDate | 2021-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-81b8fce73d8647ba87d15a37673a6eef2022-12-21T21:32:39ZengWileyAdvanced Science2198-38442021-12-01823n/an/a10.1002/advs.202101502Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer SubstratesMoon Hyo Kang0John Armitage1Zahra Andaji‐Garmaroudi2Henning Sirringhaus3Optoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UKOptoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UKOptoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UKOptoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UKAbstract Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V−1 s−1 with high on–off current ratio of 108. The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low‐temperature solution‐processed metal oxide semiconductors.https://doi.org/10.1002/advs.202101502air stabilityanalog differential amplifierhigh mobilityoxygen vacancysolution‐processed metal oxide transistors |
| spellingShingle | Moon Hyo Kang John Armitage Zahra Andaji‐Garmaroudi Henning Sirringhaus Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates Advanced Science air stability analog differential amplifier high mobility oxygen vacancy solution‐processed metal oxide transistors |
| title | Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates |
| title_full | Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates |
| title_fullStr | Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates |
| title_full_unstemmed | Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates |
| title_short | Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates |
| title_sort | surface passivation treatment to improve performance and stability of solution processed metal oxide transistors for hybrid complementary circuits on polymer substrates |
| topic | air stability analog differential amplifier high mobility oxygen vacancy solution‐processed metal oxide transistors |
| url | https://doi.org/10.1002/advs.202101502 |
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