Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies
It is crucial to discover lead-free materials with ultrahigh recoverable energy density ([Formula: see text][Formula: see text]) that can be employed in future pulse power capacitors. In this work, a high [Formula: see text][Formula: see text]of 4.51 J/cm3 was successfully obtained in lead-free Nd-d...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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World Scientific Publishing
2023-02-01
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| Series: | Journal of Advanced Dielectrics |
| Subjects: | |
| Online Access: | https://www.worldscientific.com/doi/10.1142/S2010135X22420061 |
| _version_ | 1797895626364551168 |
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| author | Zhilun Lu Dongyang Sun Ge Wang Jianwei Zhao Bin Zhang Dawei Wang Islam Shyha |
| author_facet | Zhilun Lu Dongyang Sun Ge Wang Jianwei Zhao Bin Zhang Dawei Wang Islam Shyha |
| author_sort | Zhilun Lu |
| collection | DOAJ |
| description | It is crucial to discover lead-free materials with ultrahigh recoverable energy density ([Formula: see text][Formula: see text]) that can be employed in future pulse power capacitors. In this work, a high [Formula: see text][Formula: see text]of 4.51 J/cm3 was successfully obtained in lead-free Nd-doped AgNb[Formula: see text]Ta[Formula: see text]O3 antiferroelectric ceramics at an applied electric field of 290 kV/cm. It is discovered that Nd doping paired with Nb-site vacancies could stabilize the antiferroelectric phase by lowering the temperatures of the M1–M2 and M2–M3 phase transitions, which leads to higher energy storage efficiency. Furthermore, Nd and Ta co-doping will contribute to the electrical homogeneity and low electrical conductivity, resulting in large breakdown strengths. Aliovalent doping in Ag-site with Nb-site vacancies serves as a novel strategy for the construction of AgNbO3-based ceramics with excellent energy storage performance. |
| first_indexed | 2024-04-10T07:28:51Z |
| format | Article |
| id | doaj.art-81d5a12d6fa44c1abed5dea0b8c504d9 |
| institution | Directory Open Access Journal |
| issn | 2010-135X 2010-1368 |
| language | English |
| last_indexed | 2024-04-10T07:28:51Z |
| publishDate | 2023-02-01 |
| publisher | World Scientific Publishing |
| record_format | Article |
| series | Journal of Advanced Dielectrics |
| spelling | doaj.art-81d5a12d6fa44c1abed5dea0b8c504d92023-02-24T03:10:31ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682023-02-01130110.1142/S2010135X22420061Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacanciesZhilun Lu0Dongyang Sun1Ge Wang2Jianwei Zhao3Bin Zhang4Dawei Wang5Islam Shyha6School of Computing, Engineering and The Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UKSchool of Computing, Engineering and The Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UKDepartment of Materials, University of Manchester, Manchester S13 9PL, UKShenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. ChinaShenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. ChinaShenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. ChinaSchool of Computing, Engineering and The Built Environment, Edinburgh Napier University, Edinburgh EH10 5DT, UKIt is crucial to discover lead-free materials with ultrahigh recoverable energy density ([Formula: see text][Formula: see text]) that can be employed in future pulse power capacitors. In this work, a high [Formula: see text][Formula: see text]of 4.51 J/cm3 was successfully obtained in lead-free Nd-doped AgNb[Formula: see text]Ta[Formula: see text]O3 antiferroelectric ceramics at an applied electric field of 290 kV/cm. It is discovered that Nd doping paired with Nb-site vacancies could stabilize the antiferroelectric phase by lowering the temperatures of the M1–M2 and M2–M3 phase transitions, which leads to higher energy storage efficiency. Furthermore, Nd and Ta co-doping will contribute to the electrical homogeneity and low electrical conductivity, resulting in large breakdown strengths. Aliovalent doping in Ag-site with Nb-site vacancies serves as a novel strategy for the construction of AgNbO3-based ceramics with excellent energy storage performance.https://www.worldscientific.com/doi/10.1142/S2010135X22420061AgNbO3-based ceramicsantiferroelectricenergy storage |
| spellingShingle | Zhilun Lu Dongyang Sun Ge Wang Jianwei Zhao Bin Zhang Dawei Wang Islam Shyha Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies Journal of Advanced Dielectrics AgNbO3-based ceramics antiferroelectric energy storage |
| title | Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies |
| title_full | Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies |
| title_fullStr | Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies |
| title_full_unstemmed | Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies |
| title_short | Energy storage properties in Nd-doped AgNbTaO3 lead-free antiferroelectric ceramics with Nb-site vacancies |
| title_sort | energy storage properties in nd doped agnbtao3 lead free antiferroelectric ceramics with nb site vacancies |
| topic | AgNbO3-based ceramics antiferroelectric energy storage |
| url | https://www.worldscientific.com/doi/10.1142/S2010135X22420061 |
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