Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
The gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simula...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0035460 |
| _version_ | 1819155647169560576 |
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| author | Dae-Young Jeon |
| author_facet | Dae-Young Jeon |
| author_sort | Dae-Young Jeon |
| collection | DOAJ |
| description | The gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simulation. Compared to bulk neutral channels, a pronounced surface accumulation channel limited the overall electrical characteristics of GAA NS JLTs at narrow widths. Additionally, the variation in Vth of GAA NS JLTs was much smaller than that in tri-gate JLTs. Quantum mechanical effects in GAA NS JLTs with a very narrow width were also investigated. |
| first_indexed | 2024-12-22T15:40:18Z |
| format | Article |
| id | doaj.art-81fbe8fde810411b95ee3bd250599ca5 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T15:40:18Z |
| publishDate | 2021-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-81fbe8fde810411b95ee3bd250599ca52022-12-21T18:21:08ZengAIP Publishing LLCAIP Advances2158-32262021-05-01115055111055111-510.1063/5.0035460Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistorsDae-Young Jeon0Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 55324, South KoreaThe gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simulation. Compared to bulk neutral channels, a pronounced surface accumulation channel limited the overall electrical characteristics of GAA NS JLTs at narrow widths. Additionally, the variation in Vth of GAA NS JLTs was much smaller than that in tri-gate JLTs. Quantum mechanical effects in GAA NS JLTs with a very narrow width were also investigated.http://dx.doi.org/10.1063/5.0035460 |
| spellingShingle | Dae-Young Jeon Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors AIP Advances |
| title | Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors |
| title_full | Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors |
| title_fullStr | Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors |
| title_full_unstemmed | Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors |
| title_short | Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors |
| title_sort | channel geometry dependent threshold voltage and transconductance degradation in gate all around nanosheet junctionless transistors |
| url | http://dx.doi.org/10.1063/5.0035460 |
| work_keys_str_mv | AT daeyoungjeon channelgeometrydependentthresholdvoltageandtransconductancedegradationingateallaroundnanosheetjunctionlesstransistors |