High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires

A graphene photodetector decorated with Bi<sub>2</sub>Te<sub>3</sub> nanowires (NWs) with a high gain of up to 3 × 10<sup>4</sup> and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compar...

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Main Authors: Tae Jin Yoo, Wan Sik Kim, Kyoung Eun Chang, Cihyun Kim, Min Gyu Kwon, Ji Young Jo, Byoung Hun Lee
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/3/755
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author Tae Jin Yoo
Wan Sik Kim
Kyoung Eun Chang
Cihyun Kim
Min Gyu Kwon
Ji Young Jo
Byoung Hun Lee
author_facet Tae Jin Yoo
Wan Sik Kim
Kyoung Eun Chang
Cihyun Kim
Min Gyu Kwon
Ji Young Jo
Byoung Hun Lee
author_sort Tae Jin Yoo
collection DOAJ
description A graphene photodetector decorated with Bi<sub>2</sub>Te<sub>3</sub> nanowires (NWs) with a high gain of up to 3 × 10<sup>4</sup> and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi<sub>2</sub>Te<sub>3</sub> nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi<sub>2</sub>Te<sub>3</sub> NWs junction. Eventually, with low bandgap Bi<sub>2</sub>Te<sub>3</sub> NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).
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spelling doaj.art-82310ba3892841478fa8ca873284bad82023-11-21T10:54:43ZengMDPI AGNanomaterials2079-49912021-03-0111375510.3390/nano11030755High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> NanowiresTae Jin Yoo0Wan Sik Kim1Kyoung Eun Chang2Cihyun Kim3Min Gyu Kwon4Ji Young Jo5Byoung Hun Lee6Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, KoreaCenter for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, KoreaCenter for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, KoreaA graphene photodetector decorated with Bi<sub>2</sub>Te<sub>3</sub> nanowires (NWs) with a high gain of up to 3 × 10<sup>4</sup> and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi<sub>2</sub>Te<sub>3</sub> nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi<sub>2</sub>Te<sub>3</sub> NWs junction. Eventually, with low bandgap Bi<sub>2</sub>Te<sub>3</sub> NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).https://www.mdpi.com/2079-4991/11/3/755chemical vapor deposition (CVD) graphenephotodetectorBi<sub>2</sub>Te<sub>3</sub> nanowiresinfrared photodetectorgraphene photodetector
spellingShingle Tae Jin Yoo
Wan Sik Kim
Kyoung Eun Chang
Cihyun Kim
Min Gyu Kwon
Ji Young Jo
Byoung Hun Lee
High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
Nanomaterials
chemical vapor deposition (CVD) graphene
photodetector
Bi<sub>2</sub>Te<sub>3</sub> nanowires
infrared photodetector
graphene photodetector
title High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
title_full High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
title_fullStr High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
title_full_unstemmed High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
title_short High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires
title_sort high gain and broadband absorption graphene photodetector decorated with bi sub 2 sub te sub 3 sub nanowires
topic chemical vapor deposition (CVD) graphene
photodetector
Bi<sub>2</sub>Te<sub>3</sub> nanowires
infrared photodetector
graphene photodetector
url https://www.mdpi.com/2079-4991/11/3/755
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