Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective
The optical properties and geometry of EUV mask absorbers play an essential role in determining the imaging performance of a mask in EUV lithography. Imaging metrics, including Normalized Image Log Slope (NILS), Telecentricity Error (TCE), and Best Focus Variation (BFV) through pitch deteriorate bec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007223000539 |