Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts
Abstract In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations,...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-46514-0 |
| _version_ | 1797630317864943616 |
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| author | Sha Han Cai-Juan Xia Min Li Xu-Mei Zhao Guo-Qing Zhang Lian-Bi Li Yao-Heng Su Qing-Long Fang |
| author_facet | Sha Han Cai-Juan Xia Min Li Xu-Mei Zhao Guo-Qing Zhang Lian-Bi Li Yao-Heng Su Qing-Long Fang |
| author_sort | Sha Han |
| collection | DOAJ |
| description | Abstract In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors. |
| first_indexed | 2024-03-11T11:05:29Z |
| format | Article |
| id | doaj.art-828ac3dde222434084f0b592a688dea0 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-11T11:05:29Z |
| publishDate | 2023-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-828ac3dde222434084f0b592a688dea02023-11-12T12:13:23ZengNature PortfolioScientific Reports2045-23222023-11-011311810.1038/s41598-023-46514-0Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contactsSha Han0Cai-Juan Xia1Min Li2Xu-Mei Zhao3Guo-Qing Zhang4Lian-Bi Li5Yao-Heng Su6Qing-Long Fang7School of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversitySchool of Science, Xi’an Polytechnic UniversityAbstract In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.https://doi.org/10.1038/s41598-023-46514-0 |
| spellingShingle | Sha Han Cai-Juan Xia Min Li Xu-Mei Zhao Guo-Qing Zhang Lian-Bi Li Yao-Heng Su Qing-Long Fang Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts Scientific Reports |
| title | Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts |
| title_full | Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts |
| title_fullStr | Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts |
| title_full_unstemmed | Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts |
| title_short | Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts |
| title_sort | interfacial electronic states and self formed asymmetric schottky contacts in polar α in2se3 au contacts |
| url | https://doi.org/10.1038/s41598-023-46514-0 |
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